Standout Papers

Free exciton emission in GaN 1996 2026 2006 2016 113
  1. Free exciton emission in GaN (1996)
    D. Kovalev, B. Averboukh et al. Physical review. B, Condensed matter

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Works of B. Averboukh being referenced

Hole burning spectroscopy of porous silicon
1998
Free exciton emission in GaN
1996 StandoutNobel
Structure and electronic properties of SiO2/Si multilayer superlattices: Si K edge and L3,2 edge x-ray absorption fine structure study
2002
Influence of Quantum Confinement on the Critical Points of the Band Structure of Si
1996
Shallow donors in epitaxial GaN
1997
Luminescence studies of a Si/SiO2 superlattice
2002
Optically Induced Polarization Anisotropy in Porous Si
1996
Symmetry of the Electronic States of Si Nanocrystals: An Experimental Study
1997
Nonlinear optical effects in porous silicon: Photoluminescence saturation and optically induced polarization anisotropy
1997
Photoluminescence Excitation Studies of the Optical Transitions in GaN
1996 Nobel
Polarization phenomena in the optical properties of porous silicon
1996
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