Standout Papers

Photonic crystal laser lift-off GaN light-emitting diodes 2004 2026 2011 2018 171
  1. Photonic crystal laser lift-off GaN light-emitting diodes (2006)
    Aurélien David, Tetsuo Fujii et al. Applied Physics Letters
  2. Cone‐shaped surface GaN‐based light‐emitting diodes (2005)
    Tetsuo Fujii, Aurélien David et al. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
  3. Photonic Crystal-Assisted Light Extraction from a Colloidal Quantum Dot/GaN Hybrid Structure (2006)
    Frédéric S. Diana, Aurélien David et al. Nano Letters
  4. Recent results and latest views on microcavity LEDs (2004)
    Claude Weisbuch, Aurélien David et al. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
  5. Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution (2006)
    Aurélien David, Tetsuo Fujii et al. Applied Physics Letters
  6. GaN light-emitting diodes with Archimedean lattice photonic crystals (2006)
    Aurélien David, Tetsuo Fujii et al. Applied Physics Letters
  7. Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes (2008)
    Kelly McGroddy, Aurélien David et al. Applied Physics Letters
  8. Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors (2007)
    Rajat Sharma, Yong‐Seok Choi et al. Applied Physics Letters
  9. Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique (2004)
    Tetsuo Fujii, Aurélien David et al. Japanese Journal of Applied Physics
  10. Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness (2007)
    P. Morgan Pattison, Aurélien David et al. Applied Physics Letters
  11. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction (2005)
    Aurélien David, C. Meier et al. Applied Physics Letters

Citation Impact

Citing Papers

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Double embedded photonic crystals for extraction of guided light in light-emitting diodes
2012 StandoutNobel
Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs
2010
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers
2011
Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes
2008
Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier
2011
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
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Characterizations of Seebeck coefficients and thermoelectric figures of merit for AlInN alloys with various In-contents
2011
Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells
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Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
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Current Status of GaN-Based Solid-State Lighting
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High internal and external quantum efficiency InGaN/GaN solar cells
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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
2012
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
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Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
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Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
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Emergence of colloidal quantum-dot light-emitting technologies
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Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates
2013 StandoutNobel
Visible resonant modes in GaN-based photonic crystal membrane cavities
2006 StandoutNobel
Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
2012
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers
2011
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
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High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Growth of embedded photonic crystals for GaN-based optoelectronic devices
2009
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
2012
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals
2010
Spectral distribution of excitation-dependent recombination rate in an In0.13Ga0.87N epilayer
2013
GaN blue photonic crystal membrane nanocavities
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Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting
2011 StandoutNobel
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
2010 Science
Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
2011 StandoutNobel
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
Evaluation of new color metrics: guidelines for developing narrow-band red phosphors for WLEDs
2016
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes
2010
Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations
2009 StandoutNobel
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?
2016 Standout
Synthesis and Development of Graphene–Inorganic Semiconductor Nanocomposites
2015
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Prospects for LED lighting
2009 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Heterojunction Photocatalysts
2017 Standout
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
2010
On Choosing Phosphors for Near-UV and Blue LEDs for White Light
2015
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
2009
Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
2011
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Directional light extraction enhancement from GaN-based film-transferred photonic crystal light-emitting diodes
2009
High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop
2013
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008 StandoutNobel
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Electroluminescent measurement of the internal quantum efficiency of light emitting diodes
2009
Photoelectrochemical Undercut Etching of m-Plane GaN for Microdisk Applications
2009
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Efficiency droop in light‐emitting diodes: Challenges and countermeasures
2013
Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN
2008
Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
2011
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes
2010 StandoutNobel

Works of Aurélien David being referenced

Review of measures for light-source color rendition and considerations for a two-measure system for characterizing color rendition
2013
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Photonic Crystal-Assisted Light Extraction from a Colloidal Quantum Dot/GaN Hybrid Structure
2006 StandoutNobel
Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis
2010
III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
2009
Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
2008
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
2006 StandoutNobel
Optimization of Light-Diffracting Photonic-Crystals for High Extraction Efficiency LEDs
2007
Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
2010
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
2008 StandoutNobel
Droop in III-nitrides: Comparison of bulk and injection contributions
2010
Surface-Roughened Light-Emitting Diodes: An Accurate Model
2013
Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
2004 StandoutNobel
GaN light-emitting diodes with Archimedean lattice photonic crystals
2006 StandoutNobel
Ga N ∕ In Ga N light emitting diodes with embedded photonic crystal obtained by lateral epitaxial overgrowth
2008
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction
2005 StandoutNobel
Cone‐shaped surface GaN‐based light‐emitting diodes
2005 StandoutNobel
Gain comparison in polar and nonpolar\ssty{/} semipolar gallium-nitride-based laser diodes
2012
Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells
2006
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
2007 StandoutNobel
Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
2012
Color Fidelity of Light Sources Evaluated over Large Sets of Reflectance Samples
2013
Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
2015
Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness
2007 StandoutNobel
Development of the IES method for evaluating the color rendition of light sources
2015
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2026