Citation Impact
Citing Papers
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Mutant presenilins specifically elevate the levels of the 42 residue β-amyloid peptide in vivo: evidence for augmentation of a 42-specific γ secretase
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Direct Interaction of Alzheimer's Disease-related Presenilin 1 with Armadillo Protein p0071
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Pathological roles of MAPK signaling pathways in human diseases
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Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
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Clinical, Pathological, and Biochemical Spectrum of Alzheimer Disease Associated With PS-1 Mutations
2004
Conditional Forebrain Inactivation of Nicastrin Causes Progressive Memory Impairment and Age-Related Neurodegeneration
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Ubiquitin Ligase Activity of TFIIH and the Transcriptional Response to DNA Damage
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A variant of Alzheimer's disease with spastic paraparesis and unusual plaques due to deletion of exon 9 of presenilin 1
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Autosomal-dominant Alzheimer's disease: a review and proposal for the prevention of Alzheimer's disease
2010
Neurodegenerative diseases and oxidative stress
2004 Standout
The role of the ubiquitin/proteasome system in cellular responses to radiation
2003
Intracellular amyloid-β in Alzheimer's disease
2007 Standout
Localization and Possible Functions of Presenilins in Brain
1998
Epitaxial Growth of GaAs at One to Two Monolayers per Cycle by Alternate Supply of GaCl3 and AsH3
1992
Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
1991
Atomic layer epitaxy of GaAs by chemical beam epitaxy
1990
InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement
1983
Alzheimer's disease
2017 Standout
Surface processes of selective growth by atomic layer epitaxy
1994
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System
1985 StandoutNobel
Carbon incorporation in GaAs layer grown by atomic layer epitaxy
1988
Distributed feedback lasers: An overview
1991
Atomic layer epitaxy of AlAs and AlGaAs
1990
Growth and characterization of device quality GaAs produced by laser-assisted atomic layer epitaxy using triethylgallium
1993
Step-flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices
1990 StandoutNobel
Control of carbon incorporation in AlAs grown by atomic layer epitaxy using variously orientated substrates
2000
Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3
2002
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics
1989
Crystallographic selective growth of GaAs by atomic layer epitaxy
1993
The Amyloid Hypothesis of Alzheimer's Disease: Progress and Problems on the Road to Therapeutics
2002 StandoutScience
Theoretical study of the gallium chloride molecule and its interaction with arsenic dangling bonds
1993
New approach to the atomic layer epitaxy of GaAs using a fast gas stream
1988
In Situ Gravimetric Monitoring of the GaAs Growth Process in Atomic Layer Epitaxy
1991
National Institute on Aging–Alzheimer's Association guidelines for the neuropathologic assessment of Alzheimer's disease
2012 Standout
Optical properties of high-quality InGaAs/InAlAs multiple quantum wells
1991 StandoutNobel
Mass spectrometry study of ZnS atomic layer epitaxy process
1988
In situ X-ray photoemission spectroscopy for atomic layer epitaxy of InP and GaAs
1990
In situ ellipsometric diagnostics for controlled growth of metal oxides with surface chemical reactions
1994
Laser-assisted atomic layer epitaxy of GaP in chemical beam epitaxy
1993
Atomic layer epitaxy of GaAs using N2 carrier gas
1991
The mechanism of atomic layer epitaxy of GaAs using trimethylgallium and arsine
1990
Lasing properties of InGaAsP buried heterojunction lasers grown on a mesa substrate
1982
V-grooved substrate buried heterostructure InGaAsP/InP laser by one-step epitaxy
1982
The surface chemistry and kinetics of GaAs atomic layer epitaxy
1993
Surface processes in laser-atomic layer epitaxy (laser-ALE) of GaAs
1988
Migration-Enhanced Epitaxy of GaAs and AlGaAs
1988
Atomic Layer Deposition: An Overview
2009 Standout
Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3
2001
Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition
1983
Role of Hydrogen in Atomic Layer Epitaxy of GaAs Using GaCl3
1992
Atomic layer epitaxy—12 years later
1991
Embedded epitaxial growth of low-threshold GaInAsP/InP injection lasers
1981
Effective refractive index and first-order-mode cutoff conditions in InGaAsP/InP DH laser structures (λ = 1.2-1.6 µm)
1982
V-grooved substrate buried heterostructure InGaAsP/InP laser
1981
LPE of buried heterostructure laser devices
1986
Enhanced anisotropy of permalloy layers sputter deposited on V-grooved substrates and tilted surfaces
2000
Non-linear transduction strategies for chemo/biosensing on small length scales
2005 StandoutNobel
Atomic layer epitaxy of compound semiconductors with metalorganic precursors
1989
Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
1992
A novel technique for GaInAsP/InP buried heterostructure laser fabrication
1982
Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength
1980
Bound states in the continuum
2016 Standout
The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells
1991 StandoutNobel
Mass transport and the reduction of threading dislocation in GaN
2000 StandoutNobel
Atomic Layer Epitaxy of Copper on Tantalum
1997
Layer-by-layer epitaxial growth of GaN at low temperatures
1993 StandoutNobel
Direct Observation of Self-Limiting Gallium Deposition on GaAs during Laser-Atomic Layer Epitaxial Processing
1992
Study of self-limiting growth mechanism in chloride ALE
1993
Atomic Layer Epitaxy
1984
Two-dimensional electron gas on etched GaAs sidewalls by liquid phase epitaxial regrowth
1989 StandoutNobel
Temperature programmed desorption study of gallium chloride adsorbed on GaAs surfaces
1991
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices
1992 StandoutNobel
Optically pumped 1.55-μm double heterostructure GaxAlyIn1−x−yAs/AluIn1−uAs lasers grown by molecular beam epitaxy
1983
The diagnosis of dementia due to Alzheimer's disease: Recommendations from the National Institute on Aging‐Alzheimer's Association workgroups on diagnostic guidelines for Alzheimer's disease
2011 Standout
The Mechanism of Self-Limiting Growth of Atomic Layer Epitaxy of GaAs by Metalorganic Molecular Beam Epitaxy Using Trimethylgallium and Arsine
1989
Progress in chemical beam epitaxy
1990
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy
1984 StandoutNobel
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
I n s i t u x-ray photoelectron spectroscopic study of GaAs grown by atomic layer epitaxy
1989
Direct observation of GaAs atomic layer epitaxy by reflection high-energy electron diffraction
1989
CoFe/IrMn spin-valves prepared on Cu islands
1998
GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
1989
Surface reactions in the atomic layer epitaxy of GaAs using monoethylarsine
1991
Calculation of III-III-V-V quaternary layer thickness grown by liquid phase epitaxy - application to InGaAsP
1982
Growth of InAs and (InAs)1(GaAs)5 superlattice by atomic layer epitaxy using dimethylindium chloride
1992
Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl
1988
Ge Atomic Layer Epitaxy by Use of Ar Ion Laser Heating
1989
Second-order distributed feedback lasers with mode selection provided by first-order radiation losses
1985
Surface chemistry of materials deposition at atomic layer level
1996
RHEED and XPS observations of trimethylgallium adsorption on GaAs (001) surfaces—Relevance to atomic layer epitaxy
1990
Atomic layer epitaxy of GaP and elucidation for self-limiting mechanism
1990
Growth of high mobility n-type CdTe by photoassisted molecular beam epitaxy
1986
Growth and characterization of InGaAsP lattice-matched to InP
1981
(GaAs) (GaP) low dimensional short-period superlattice fabricated by atomic layer epitaxy
1998
Use of tertiarybutylarsine in atomic layer epitaxy and laser-assisted atomic layer epitaxy of device quality GaAs
1992
On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
1983
LPE growth rate in AlxGa1−xAs system; theoretical and experimental analysis
1983
Atomic layer epitaxy for the growth of heterostructure devices
1988
Solid Composition of In1-xGaxAs Grown by the Halogen Transport Atomic Layer Epitaxy
1988
Atomic layer epitaxy of AlP and its application to X-ray multilayer mirror
1997
Atomic layer epitaxy of GaAs using triethylgallium and arsine
1989
Mass Transport, Faceting and Behavior of Dislocations in GaN
2000 StandoutNobel
Biogenesis of γ-secretase early in the secretory pathway
2007 StandoutNobel
ALZHEIMER'S DISEASE: Genetic Studies and Transgenic Models
1998
Atomic layer epitaxy of III-V compounds: chemistry and applications
1992
Melt-back etching of GaN
1997 StandoutNobel
Atomic layer epitaxy of GaAs using nitrogen carrier gas
1991
Precursor properties of calcium β-diketonate in vapor phase atomic layer epitaxy
1994
Atomic Layer Epitaxy of GaAs Using GaCl3 and AsH3
1990
Steric hindrance effects in atomic layer epitaxy of InAs
1989
GaAs growth by atomic layer epitaxy using diethylgalliumchloride
1988
Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP
1981
Atomic layer epitaxy of III–V compounds in a hydride vapor phase system
1990
Atomic layer epitaxy of GaAs and role of As-source materials on self-limiting mechanism
1992
Role of a metalorganic As source in atomic layer epitaxy of GaAs and AlAs
1994
Anisotropy, exchange bias, dipolar coupling and magnetoresistive response in Nio–Co–Al2O3–Co magnetic tunnel junctions
2003 StandoutNobel
Low threshold InGaAsP/InP buried crescent laser with double current confinement structure
1981
Mechanism of atomic layer epitaxy of AlAs
1998
Diluted magnetic semiconductors
1988 Standout
Observation and control of surface morphology of AlP grown by atomic layer epitaxy
1997
Exchange bias in nanostructures
2005 Standout
Atomic layer epitaxy of AlP and (AlP)n(GaP)n superlattice using ethyldimethylamine alane as a new aluminum source
1999
InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current
1982
Surface reaction mechanism and morphology control in AlP atomic layer epitaxy
1998
Analysis of the short-time liquid phase epitaxial growth of AlxGa1-xAs
1982
Works of Atsutoshi Doi being referenced
Increased Aβ 42(43)-plaque deposition in early-onset familial Alzheimer's disease brains with the deletion of exon 9 and the missense point mutation (H163R) in the PS-1 gene
1997
Epitaxial growth of GaAs from thin Ga solution
1976
A Growth Analysis for Metalorganic Vapor Phase Epitaxy of GaAs
1988
Improvement of Crystal Composition in Ga1-xAlxAs LPE Layers Grown under Conditions of Constant Cooling Rate
1978
Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAs
1985
Characteristics of laser metalorganic vapor-phase epitaxy in GaAs
1986
Laser-assisted atomic layer epitaxy
1991
Long Wavelength InGaAsP/InP Lasers for Optical Fiber Communication Systems
1980
GaxIn1−xAsyP1−y/InP rib-waveguide injection lasers made by one-step LPE
1979
InGaAsP/InP distributed-feedback injection lasers fabricated by one-step liquid phase epitaxy
1979
Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy
1988
Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
1980
Electrical Properties of Gallium Arsenide-Insulator Interface
1974
Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxy
1987
GMR in corrugated Co/Cu multilayers
1997
Growth of GaAs by switched laser metalorganic vapor phase epitaxy
1986
Stepwise monolayer growth of GaAs by switched laser metalorganic vapor phase epitaxy
1986