Citation Impact
Citing Papers
Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
2012
Recent Developments in the Field of Inorganic Phosphors
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Applications of Ultrasound to the Synthesis of Nanostructured Materials
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Thermometry at the nanoscale
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Metal-halide perovskites for photovoltaic and light-emitting devices
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Atom probe tomography study of Mg-doped GaN layers
2014 StandoutNobel
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers
1994 StandoutNobel
Luminescence of Acceptors in Mg-Doped GaN
2013 StandoutNobel
Photoluminescence and photostimulated luminescence of Tb3+ and Eu3+ in zeolite-Y
2000
Tractable Approach for Calculating Lattice Distortions around Simple Defects in Semiconductors: Application to the Single Donor Ge in GaP
1982
Upconversion and Anti-Stokes Processes with f and d Ions in Solids
2003 Standout
Photoluminescence spectra of Ga-doped and Al-doped 4H-SiC
1977 StandoutNobel
Energy transfer in lanthanide upconversion studies for extended optical applications
2014 Standout
Properties of the electron-hole liquid in GaP
1979
Excitation mechanism of cathodoluminescence of oxisulfides
1989
First-principles calculations for point defects in solids
2014 Standout
Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass
1990
Review of temperature measurement
2000 Standout
Exchange and radiative lifetimes for close Frenkel pairs on the zinc sublattice of ZnSe
1996
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
2013 StandoutNobel
Many-electron multiplet effects in the spectra of3 d
1984
Photocapacitance Studies of the Oxygen Donor in GaP. I. Optical Cross Sections, Energy Levels, and Concentration
1973
Luminescence properties of defects in GaN
2005 Standout
Determination of ionization energies of the nitrogen donors in 6H-SiC by admittance spectroscopy
1994 StandoutNobel
Deep levels associated with (vacancy, impurity) pairs in covalent semiconductors
1984
Donor-acceptor pair spectra in 6H and 4H SiC doped with nitrogen and aluminium
1973
Behaviour of Zn as dopant in the photoluminescence of AlxGa1-xN
1986 StandoutNobel
Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films
2003 StandoutNobel
Spectroscopy of Excited Acceptor States in GaP
1976
Silica gel glasses with a high efficiency of luminescence sensitization in the Ce3+-Tb3+ system
2004
Optical characterization of III-nitrides
2002 StandoutNobel
Inhibited and Enhanced Spontaneous Emission from Optically Thin AlGaAs/GaAs Double Heterostructures
1988
The absolute energy positions of conduction and valence bands of selected semiconducting minerals
2000 Standout
Luminescent Properties of (Ba,Sr)MgAl10O17:Mn,Eu Green Phosphor Prepared by Spray Pyrolysis under VUV Excitation
2005
Upconversion Luminescence in Nanocrystals of Gd3Ga5O12 and Y3Al5O12 Doped with Tb3+−Yb3+ and Eu3+−Yb3+
2009
Free and bound excitons in thin wurtzite GaN layers on sapphire
1996 StandoutNobel
Quantum-dot optical temperature probes
2003 StandoutNobel
Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications
2016 Standout
Formation of Covalently Attached Polymer Overlayers on Si(111) Surfaces Using Ring-Opening Metathesis Polymerization Methods
2001 StandoutNobel
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Tb[sup 3+] Activated Green Phosphors for Plasma Display Panel Applications
2003
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Photoluminescence decay dynamics in an InGaN/GaN/AlGaN single quantum well
1997 StandoutNobel
Semiconducting and other major properties of gallium arsenide
1982 Standout
Cathodoluminescence study of Zn doped Gan
1978
Liquid-phase epitaxial growth of 6H-SiC by the dipping technique for preparation of blue-light-emitting diodes
1976 StandoutNobel
Optical study of spin-flip transitions atFe 3 +
1993
Time-resolved spectroscopy of Zn- and Cd-doped GaN
1987
Ab initio molecular simulations with numeric atom-centered orbitals
2009 Standout
A contactless minority lifetime probe of heterostructures, surfaces, interfaces and bulk wafers
1992
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties
2010 Standout
Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
Slip, twinning, and fracture in hexagonal close-packed metals
1981 Standout
Effect of OH- on the Luminescent Efficiency and Lifetime of Tb3+-Doped Yttrium Orthophosphate Synthesized by Solution Precipitation
2005
Fluorescence intensity ratio technique for optical fiber point temperature sensing
2003 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Deep-level transient spectroscopy: A new method to characterize traps in semiconductors
1974 Standout
Conductance and capacitance studies in GaP Schottky barriers
1975
Transition from Long-Range to Short-Range Energy Transfer through Donor Migration in Garnet Hosts
2011
Direct evidence for the nonassignment to oxygen of the main electron trap in GaAs
1979
Pair Spectra in GaP
1963 StandoutNobel
DX-like behavior of oxygen in GaN
2001 StandoutNobel
The complex form of donor energy levels in gallium phosphide
1977
Quantum optics of dielectric media
1991 StandoutNobel
Luminescent properties of the oxygen impurity centres in A1N
1974
Identification of a defect in a semiconductor:EL2 in GaAs
1986 Standout
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
Excited states of the Zn and C acceptors inAl 0.47 Ga 0.53
1983
Cd-Doped InGaN Films Grown on GaN Films
1993 StandoutNobel
Prospects for LED lighting
2009 StandoutNobel
Donor energy level for Se in Ga1−xAlxAs
1982
Effect of Si on photoluminescence of GaN
1986 StandoutNobel
Donor—acceptor pairs in semiconductors
1968
Acoustic band structure of periodic elastic composites
1993 Standout
Radiative and Auger processes in semiconductors
1973
Remote thermometry with thermographic phosphors: Instrumentation and applications
1997
Photoluminescence properties of Tb3+ and Eu3+ ions hosted in TiO2 matrix
2003
Electronic structure and bound excitons for defects in semiconductors from optical spectroscopy
1988
Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAs
1978
Acceptor binding energy in GaN and related alloys
1995
Titanium Dioxide Nanomaterials: Synthesis, Properties, Modifications, and Applications
2007 Standout
Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement of x
1987
Recent achievements in research on phosphors for lamps and displays
1997
Photoluminescence of AlxGa1−xAs alloys
1994
Band parameters for nitrogen-containing semiconductors
2003 Standout
Inhibited Spontaneous Emission in Solid-State Physics and Electronics
1987 Standout
Indirect exciton dispersion in III–V semiconductors: “Camel's back” in GaP
1979
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Cathodoluminescence Properties of Undoped and Zn-Doped AlxGa1-xN Grown by Metalorganic Vapor Phase Epitaxy
1991 StandoutNobel
Method for the analysis of saturation effects of cathodoluminescence in phosphors; applied to Zn2SiO4:Mn and Y3Al5O12:Tb
1983
Works of A.T. Vink being referenced
Kinetics of green and red-orange pair luminescence in GaP
1970
Electrical and optical properties of N-type Alx Ga1-x as grown by MO-VPE
1981
Complex fine-structure of GaP photoluminescence at 4.2°K
1962
Absorption and luminescence due to excitons bound to neutral acceptors in GaP
1970
A new interimpurity recombination in GaP; revised values for acceptor binding energies
1978
Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
1982
Fine structure in the low temperature luminescence of Zn2SiO4:Mn and Mg4Ta2O9:Mn
1974
Characteristic infrared luminescence in GaP due to Mn
1972
A method to determine bulk lifetime and diffusion coefficient of minority carriers; application to n-type LPE GaP
1977
Minority carrier lifetime and luminescence in MOVPE-grown (Al,Ga)As epilayers and DH lasers
1981
The dielectric constant of GaP from a refined analysis of donor-acceptor pair luminescence, and the deviation of the pair energy from the coulomb law
1973
Luminescence and absorption of Tb3+in mo·Al2O3·B2O3·Tb2O3 glasses
1987
The dependence of the radiative transition probability of donor-acceptor pairs on pair separation
1974
The kinetics of donor-acceptor pair transitions with strong phonon coupling in GaP
1974
Concentration dependence of UV and electron-excited Tb3+ luminescence in Y3Al5O12
1985
Low temperature luminescence in GaP at very low excitation densities
1969
Spectroscopic Observation of a Vacancy Complex in GaP
1971