Arjun Singh

Layered semiconductor molybdenum disulfide nanomembrane based Schottky-barrier solar cells

A critical review of ohmic and rectifying contacts for silicon carbide

Barrier inhomogeneities at Schottky contacts

6G Internet of Things: A Comprehensive Survey

Surface analytical studies of interfaces in organic semiconductor devices

Toward the Application of High Frequency Electromagnetic Wave Absorption by Carbon Nanostructures

The bias-dependence change of barrier height of Schottky diodes under forward bias by including the series resistance effect

Reconfigurable Intelligent Surfaces: Principles and Opportunities

Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces

Electromagnetic Absorption Properties of Carbon Nanotube Nanocomposite Foam Filling Honeycomb Waveguide Structures

Smart Radio Environments Empowered by Reconfigurable Intelligent Surfaces: How it Works, State of Research, and Road Ahead

Edge Artificial Intelligence for 6G: Vision, Enabling Technologies, and Applications

Overview of carbon nanostructures and nanocomposites for electromagnetic wave shielding

Metal Schottky barrier contacts to alpha 6H-SiC

Infrared detectors: status and trends

Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)

Intelligent Reflecting Surface-Aided Wireless Communications: A Tutorial

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)

Integrated Sensing and Communications: Toward Dual-Functional Wireless Networks for 6G and Beyond

Imaging Schottky Barriers and Ohmic Contacts in PbS Quantum Dot Devices

Enhanced electromagnetic absorption properties of carbon nanotubes and zinc oxide whisker microwave absorber

Polymer/carbon based composites as electromagnetic interference (EMI) shielding materials

Characterization of interface states at Ni/nCdF2 Schottky barrier type diodes and the effect of CdF2 surface preparation

Temperature dependence of the electrical characteristics of Yb/p-InP tunnel metal-insulator-semiconductor junctions

X60: A Programmable Testbed for Wideband 60 GHz WLANs with Phased Arrays

Reverse I-V and C-V characteristics of Schottky barrier type diodes on Zn doped InP epilayers grown by metalorganic vapor phase epitaxy

Effect of doping on the forward current-transport mechanisms in a metal–insulator–semiconductor contact to InP:Zn grown by metal organic vapor phase epitaxy

Modified composition of barium ferrite to act as a microwave absorber in X-band frequencies