Citation Impact
Citing Papers
Donor impurity band exchange in dilute ferromagnetic oxides
2005 Standout
Influence of low-energy electron beam irradiation on defects in activated Mg-doped GaN
2002
First-principles calculations for point defects in solids
2014 Standout
A review of Ga2O3 materials, processing, and devices
2018 Standout
Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage
2001
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers
2006
The microscopic origin of the doping limits in semiconductors and wide-gap materials and recent developments in overcoming these limits: a review
2002
Wide band gap ferromagnetic semiconductors and oxides
2002
Spintronics: Fundamentals and applications
2004 Standout
A comprehensive review of ZnO materials and devices
2005 Standout
GaN-Based RF Power Devices and Amplifiers
2008 Standout
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
V-defects and dislocations in InGaN/GaN heterostructures
2005
Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes
2017
Unusual defect physics in CH3NH3PbI3 perovskite solar cell absorber
2014 Standout
Overcoming the doping bottleneck in semiconductors
2004
Electrical activation characteristics of silicon-implanted GaN
2005
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
2017
Design of junction termination structures for GaN Schottky power rectifiers
2003
Characterization and Analysis of the Temperature-Dependent on -Resistance in AlGaN/GaN Lateral Field-Effect Rectifiers
2010
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
2013 StandoutNobel
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Annealing of dry etch damage in metallized and bare (-201) Ga2O3
2017
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
2013 StandoutNobel
Comparison of GaN p-i-n and Schottky rectifier performance
2001
Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode
2003
Unique Properties of Halide Perovskites as Possible Origins of the Superior Solar Cell Performance
2014 Standout
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Review of radiation damage in GaN-based materials and devices
2013
160-A bulk GaN Schottky diode array
2003
High Density Two-Dimensional Hole Gas Induced by Negative Polarization at GaN/AlGaN Heterointerface
2010
On the hole effective mass and the free hole statistics in wurtzite GaN
2003
Hexagonal-based pyramid void defects in GaN and InGaN
2012
Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
2021 StandoutNobel
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching
2001
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
GaN Overgrowth on Thermally Etched Nanoporous GaN Template
2013 StandoutNobel
Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
2013 StandoutNobel
Localized surface phonon polariton resonances in polar gallium nitride
2015
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Works of A.P. Zhang being referenced
Surface and bulk leakage currents in high breakdown GaN rectifiers
2000
GaN n- and p-type Schottky diodes: Effect of dry etch damage
2000
Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers
2002
High voltage GaN Schottky rectifiers
2000
GaN electronics for high power, high temperature applications
2001
Fabrication and performance of GaN electronic devices
2000