Citation Impact
Citing Papers
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Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate
1989
A single mode, cw, diode laser at the cesium D1 (894.59 nm) transition
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Real-space description of semiconducting band gaps in substitutional systems
1991
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
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1988
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Spintronics: Fundamentals and applications
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1987
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1994
Band lineup for a GaInP/GaAs heterojunction measured by a high-gain N p n heterojunction bipolar transistor grown by metalorganic chemical vapor deposition
1989
Blue-Green Light-Emitting Diodes and Violet Laser Diodes
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Measurement of the gravitational acceleration of an atom with a light-pulse atom interferometer
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1989
Optical Gain and Stimulated Emission in Nanocrystal Quantum Dots
2000 StandoutScienceNobel
First-principles calculation of alloy phase diagrams: The renormalized-interaction approach
1989
Raman scattering in (AlxGa1−x)0.51In0.49P quaternary alloys
1988
Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD
1988
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
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Quantum dot nanostructures and molecular beam epitaxy
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Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy
1997
Subpicosecond spin relaxation in GaAsSb multiple quantum wells
1999
Measurement of Parity Nonconservation and an Anapole Moment in Cesium
1997 StandoutScienceNobel
Atomic layer epitaxy of GaInP ordered alloy
1990
Slab plasmon polaritons and waveguide modes in four-layer resonant semiconductor waveguides
1997
Modeling of two-junction, series-connected tandem solar cells using top-cell thickness as an adjustable parameter
1990
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Precision measurement of ?/m Cs based on photon recoil using laser-cooled atoms and atomic interferometry
1994 StandoutNobel
Band gaps and spin-orbit splitting of ordered and disorderedAl x Ga 1 − x As Ga As x Sb 1 − x
1989
Ordering-induced band-gap reduction inInAs 1 − x Sb x
1992
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Spontaneous ordering inGaInP 2
1993
Ordering of isovalent intersemiconductor alloys
1988
A compact grating-stabilized diode laser system for atomic physics
1995 StandoutNobel
Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers
1991
Heterojunction band offsets and effective masses in III-V quaternary alloys
1991
Ordered-disordered ternary alloys by atomic layer epitaxy
1991
Carbon Nanomaterials for Biological Imaging and Nanomedicinal Therapy
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Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer
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Electroreflectance Study of (AlxGa1-x)0.5In0.5P Alloys
1996
GaNAsSb: how does it compare with other dilute III V-nitride alloys?
2002
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Frequency stabilization of a diode laser using simultaneous optical feedback from a diffraction grating and a narrowband Fabry–Perot cavity
1991 StandoutNobel
Diode lasers in external cavities with frequency-shifted feedback
1991 StandoutNobel
Microampere laser threshold at 80°C with InGaAs/GaAs/InGaP buried heterostructre strained quantum well lasers
1997
A low-noise high-speed diode laser current controller
1993 StandoutNobel
Ordering induced splitting of light-hole and heavy-hole bands in GaInP grown by organometallic vapor-phase epitaxy
1992
Using diode lasers for atomic physics
1991 StandoutNobel
Silicon optical diode based on cascaded photonic crystal cavities
2014
Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties
1995 StandoutNobel
Electroreflectance study of AlxGa1−x−yInyP alloy
1989
A Monolithic Photovoltaic-Photoelectrochemical Device for Hydrogen Production via Water Splitting
1998 StandoutScience
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Band-edge states and valence-band offset of GaP/InP strained-layer superlattices
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One-dimensional vibrations and disorder: TheZr 1 − x Hf x S 3
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High brightness AlGaInP light-emitting diodes
2002
Integrated optofluidics: A new river of light
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Band-gap narrowing in ordered and disordered semiconductor alloys
1990
Novel design scheme for high-speed MQW lasers with enhanced differential gain and reduced carrier transport effect
1998 StandoutNobel
Colossal dielectric constants in single-crystalline and ceramic CaCu3Ti4O12 investigated by broadband dielectric spectroscopy
2008
Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys
1995
The present status of quantum dot lasers
1999
Control of ordering in GaInP and effect on bandgap energy
1994
First-principles calculation of temperature-composition phase diagrams of semiconductor alloys
1990
Second harmonic generation at 972 nm using a distributed Bragg reflection semiconductor laser
1992 StandoutNobel
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
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Band parameters for nitrogen-containing semiconductors
2003 Standout
Ordering-induced changes in the optical spectra of semiconductor alloys
1988
Determination of the GaInP/AlGaInP band offset
1990
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility
1993 StandoutNobel
Optically resonant dielectric nanostructures
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Exciton localization effects and heterojunction band offset in (Ga,In)P-(Al,Ga,In)P multiple quantum wells
1993
InGaP/InGaAlP double-heterostructure and multiquantum-well laser diodes grown by molecular-beam epitaxy
1987
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Works of Akiko Gomyo being referenced
GaAsSb: A novel material for 1.3 µm VCSELs
1998
Re-examination of the formation mechanism of CuPt-type natural superlattices in alloy semiconductors
1991
Nonexistence of Long-Range Order in Ga0.5In0.5P Epitaxial Layers Grown on (111)B and (110)GaAs Substrates
1988
Long-wavelength lasing from InAs self-assembled quantum dots on (311) B InP
1998
Observation of Strong Ordering inGa x In 1 − x P
1988
Silicon and Selenium Doping Effects on Band-Gap Energy and Sublattice Ordering in Ga0.5In0.5P Grown by Metalorganic Vapor Phase Epitaxy
1989
Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
1986
Observation of micromechanically controlled tuning of photonic crystal line-defect waveguide
2005
Aging characteristics of AlGaInP/GaInP visible-light lasers (λ L = 678 nm)
1987
Room-temperature CW operation of AlGaInP double-heterostructure visible lasers
1985
Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy
1987
Observation of enhanced photoluminescence from silicon photonic crystal nanocavity at room temperature
2007
Transverse Mode Stabilized 670Nm Atgainp Visible-Light Laser Diodes
1988
Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy
1997
MOCVD-Grown Al0.5In0.5P–Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 K
1982
Strong ordering in GaInP alloy semiconductors; Formation mechanism for the ordered phase
1988
Continuous wave operation (77 K) of yellow (583.6 nm) emitting AlGaInP double heterostructure laser diodes
1986
632.7 nm CW Operation (20°C) of AlGaInP Visible Laser Diodes Fabricated on (001) 6° off toward [110] GaAs Substrate
1990
Structure Modulation of Al0.5In0.5P Studied by Energy-Filtered Electron Diffraction and High-Resolution Electron Microscopy
1998
Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
1988
Immittance matching for multidimensional open-system photonic crystals
2003
AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy
1987