Standout Papers

Double-Gate Tunnel FET With High- Gate Dielectric 2007 2026 2013 2019 1.1k
  1. Double-Gate Tunnel FET With High- Gate Dielectric (2007)
    Kathy Boucart, Adrian Ionescu IEEE Transactions on Electron Devices

Immediate Impact

5 by Nobel laureates 33 from Science/Nature 77 standout
Sub-graph 1 of 23

Citing Papers

Synaptic and neural behaviours in a standard silicon transistor
2025 StandoutNature
Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide
2024 StandoutNature
2 intermediate papers

Works of Adrian Ionescu being referenced

Double-Gate Tunnel FET With High- Gate Dielectric
2007 Standout

Author Peers

Author Last Decade Papers Cites
Adrian Ionescu 443 1515 330 577 64 2.1k
Christopher Nordquist 400 1123 602 765 70 1.6k
Ann F. Marshall 544 1070 983 790 51 1.8k
V. Bellani 659 1009 1153 496 79 1.9k
Chang Kwon Hwangbo 430 705 428 489 98 1.4k
Stefan Mátéfi‐Tempfli 444 490 644 489 55 1.4k
D. Deresmes 806 968 626 483 74 1.6k
Katsuaki Tanabe 905 1499 841 866 83 2.3k
Henri Jussila 957 1375 1292 786 40 2.4k
W. I. Milne 434 1053 1077 1179 50 2.3k
W. K. Choi 342 1244 1051 472 78 1.9k

All Works

Loading papers...

Rankless by CCL
2026