Citation Impact

Citing Papers

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Quantum computers
2010 StandoutNature
Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
2009 Standout
New and Old Concepts in Thermoelectric Materials
2009 Standout
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Molecular coherent-potential approximation for zinc-blende pseudobinary alloys
1987
Band structure of semiconductor alloys
1988
High-field transport and terahertz generation in GaN
2008
Real-space description of semiconducting band gaps in substitutional systems
1991
A minimal basis semi-ab initio approach to the band structures of semiconductors
1985
First-principles calculations for point defects in solids
2014 Standout
III-V nitrides for electronic and optoelectronic applications
1991 StandoutNobel
Interface chemistry of ternary semiconductors: Local morphology of theHg1−xCdxTe(110)-Cr interface
1985
Reduced symmetry and the band structure of semiconductor alloys
1986
Effect of different cation-anion bond strengths on metal–ternary-semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe
1986 StandoutNobel
Band-gap bowing in Ga1−xInxN alloys
1997
Optical bowing in zinc chalcogenide semiconductor alloys
1986
Special quasirandom structures
1990 Standout
Local valence-band densities of states ofAlxGa1−xAs
1988
Luminescence properties of defects in GaN
2005 Standout
Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide
1980
Thermoelectric properties of Si1−xGex(x⩽0.10) with alloy and dopant segregations
2000
Spintronics: Fundamentals and applications
2004 Standout
Electronic structure of III-V semiconductors and alloys using simple orbitals
1980
A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys
1991
First-principles calculations of gap bowing inInxGa1−xNandInxAl1−xNalloys: Relation to structural and thermodynamic properties
2002
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells
2000 StandoutNobel
Crystallization by particle attachment in synthetic, biogenic, and geologic environments
2015 StandoutScience
Electronic structure of pseudobinary semiconductor alloys InxGa1−x and InAsxSb1−x
1995
Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications
2012 Standout
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Optical properties ofIn1−xGaxAsyP1−yfrom 1.5 to 6.0 eV determined by spectroscopic ellipsometry
1982
NK-edge x-ray-absorption study of heteroepitaxial GaN films
1997 StandoutNobel
Spin lifetimes of electrons injected into GaAs and GaN
2003
Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations
2002
Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation
1999
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Effective masses of electrons and heavy holes in InAs, InSb, GaSb, GaAs and some of their ternary compounds
1999
Green and red emission in Ca implanted GaN samples
2001
Hot electron transport in AlN
2000 StandoutNobel
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Noble-metal–CdTe interface formation
1988 StandoutNobel
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Structural analysis of InxGa1−xN single quantum wells by coaxial-impact collision ion scattering spectroscopy
2000 StandoutNobel
Dynamics and polarization of group-III nitride lattices: A first-principles study
2000
Bulk nanostructured thermoelectric materials: current research and future prospects
2009 Standout
Temperature dependence of the dielectric function and the interband critical-point parameters ofAlxGa1−xAs
1991
Determination of free carrier concentration profiles and the valence-band discontinuity energy of Hg0.7Cd0.3Te/Cd(4% Zn)Te heterojunctions using organic semiconductor layers
1989
Simulation of visible and ultra-violet group-III nitride light emitting diodes
2005
The maximum possible conversion efficiency of silicon-germanium thermoelectric generators
1991
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Spectroscopic determination of L6conduction band minima in AlxGa1-xAs
1986
Al and Ga contributions to the density of states ofAlxGa1−xAs
1989
Electronic structure ofPb1−xSrxS. Application of the Haydock recursion method
1983
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
1989
Transient electron transport in wurtzite GaN, InN, and AlN
1999
Overlayer-cation reaction at the Pt/Hg_{1-x}Cd_{x}Te interface
1987 StandoutNobel
Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO
2001 Standout
Influence of Conformation on Conductance of Biphenyl-Dithiol Single-Molecule Contacts
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Electronic structure ofHg1−xCdxTe
1983
Electronic structure of ZnS, ZnSe, ZnTe, and their pseudobinary alloys
1987
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Tight-binding view of alloy scattering in III-V ternary semiconducting alloys
1984
Role of metaldstates in II-VI semiconductors
1988
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Electrical Properties of Self-Assembled Branched InAs Nanowire Junctions
2008
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Thermoelectric properties of nanostructured Si1−xGex and potential for further improvement
2010
Lattice distortion in Cu-based dilute alloys: A first-principles study by the KKR Green-function method
1997
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Band bending and photoemission-induced surface photovoltages on cleann- andp-GaN (0001) surfaces
2002
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Approaching the Minimum Thermal Conductivity in Rhenium‐Substituted Higher Manganese Silicides
2014 StandoutNobel
Optical and structural studies of homoepitaxially grown m-plane GaN
2012
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Energy bands of ternary alloy semiconductors: Coherent-potential-approximation calculations
1983
Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy
2004
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
Orbital-dependent density functionals: Theory and applications
2008
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Quasichemical approximation in binary alloys
1987
Microstructures and properties of high-entropy alloys
2013 Standout
Extended x-ray-absorption fine-structure study ofGa1−xInxAsrandom solid solutions
1983
Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
2001
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy,Hg1−xCdxTe
1982
Average Bond Lengths and Atom Arrangement in In1-xGaxAs and GaAs1-xPx III-V Ternary Alloy Semiconductors
1987
Electronic structure and optical properties of the quaternary alloy Ga1 − xAlxAsySb1 − y
1996
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Suppression of phase separation in InGaN due to elastic strain
1998
Isotope effects on the optical spectra of semiconductors
2005
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
2004
Atomistic theory of transport in organic and inorganic nanostructures
2004
When group-III nitrides go infrared: New properties and perspectives
2009
Average bonding-antibonding energy at semiconductor heterojunctions and its application to calculating the valence band offset
1992
Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys
1995
Disorder effect on the photoabsorption of III-V semiconductor alloys
1984
Calculation of shallow donor levels in GaN
2000
Structural Origin of Optical Bowing in Semiconductor Alloys
1983
Energy band-gap bowing parameter in an AlxGa1−x N alloy
1987 StandoutNobel
Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy
2014 StandoutNobel
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN
2000
Electronic properties of semiconductor alloy systems
1985
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
2011
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Effective masses and valence-band splittings in GaN and AlN
1997
Breakdown of the band-gap-common-cation rule:  The origin of the small band gap of InN
2003
Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary Alloys
1984

Works of A.-B. Chen being referenced

On the determination of the energy band offsets in Hg1−xCdxTe heterojunctions
1983
Systematics of chemical and structural disorder on band-edge properties of semiconductor alloys
1988
Bandstructure effect on high-field transport in GaN and GaAlN
1997
Sensitivity of defect energy levels to host band structures and impurity potentials in CdTe
1985
Theory of AlN, GaN, InN and their alloys
1997
Band structures ofSixGe1−xalloys
1986
Semiconductor pseudobinary alloys: Bond-length relaxation and mixing enthalpies
1985
Bound states for anisotropic potentials and masses
1993
Electronic structure of pseudobinary semiconductor alloysAlxGa1−xAs,GaPxAs1−x, andGaxIn1−xP
1981
Calculations of acceptor ionization energies in GaN
2001
Temperature dependence of band gaps in HgCdTe and other semiconductors
1995
Velocity-field characteristics of III-V semiconductor alloys: Band structure influences
1987
Relation between the electronic states and structural properties of Hg1−xCdxTe
1983
Valence-band structures of III-V compounds and alloys—Bond-orbital and coherent-potential approximations
1978
Rankless by CCL
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