А. В. Саченко

A review of Ga2O3 materials, processing, and devices

Ohmic contacts to Gallium Nitride materials

Mechanism of current flow in a Au-Ti-Al-Ti-n +-GaN ohmic contact in the temperature range of 4.2–300 K

Resistance formation mechanisms for contacts to n ‐GaN and n ‐AlN with high dislocation density

Mechanism of contact resistance formation in ohmic contacts with high dislocation density