Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Complete composition tunability of InGaN nanowires using a combinatorial approach
2007
Mie Resonances, Infrared Emission, and the Band Gap of InN
2004 StandoutNobel
Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
2013
Optical bandgap energy of wurtzite InN
2002
Blue Light Emitting Defective Nanocrystals Composed of Earth‐Abundant Elements
2019 StandoutNobel
Compound Copper Chalcogenide Nanocrystals
2017
X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN
2003
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
2003 StandoutNobel
Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells
2011 StandoutNobel
Magneto-Optical Properties of CuInS2 Nanocrystals
2014
Indium nitride (InN): A review on growth, characterization, and properties
2003
Temperature dependence of the fundamental band gap of InN
2003
Physical Mechanisms of Generation and Deactivation of Singlet Oxygen
2003 Standout
Direct water photoelectrolysis with patterned n-GaN
2007 StandoutNobel
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Substitutional carbon in group-III nitrides:Ab initiodescription of shallow and deep levels
2002
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Localized Surface Plasmon Resonance in Semiconductor Nanocrystals
2018
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
First-principles calculations of gap bowing inIn x Ga 1 − x N In x Al 1 − x N
2002
Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
2003
Fabrication and characterization of InGaN p-i-n homojunction solar cell
2009
Optical properties and electronic structure of InN and In-rich group III-nitride alloys
2004
Phase Separation, Gap Bowing, and Structural Properties of Cubic InxAl1—xN
2002
Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition
2001 StandoutNobel
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
2008
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
Shubinaet al.Reply:
2004 StandoutNobel
Effects of film polarities on InN growth by molecular-beam epitaxy
2003
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
2006
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
2008
Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations
2002
Electronic structure of bound excitons in semiconductors
1987
Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI)
2017 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
2002
Design and characterization of GaN∕InGaN solar cells
2007
Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
2003 StandoutNobel
Single-Particle Photoluminescence Spectra, Blinking, and Delayed Luminescence of Colloidal CuInS2 Nanocrystals
2016
Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals
2015 StandoutScience
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Small band gap bowing in In1−xGaxN alloys
2002
Unusual properties of the fundamental band gap of InN
2002
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Research opportunities to advance solar energy utilization
2016 StandoutScience
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
A-Site Cation in Inorganic A3Sb2I9 Perovskite Influences Structural Dimensionality, Exciton Binding Energy, and Solar Cell Performance
2018 StandoutNobel
Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy
2005
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Do we know the fundamental energy gap of InN?
2002
Comment on ?Band Gap of InN and In-Rich InxGa1?xN Alloys (0.36 < x < 1)?
2002
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Improved Power Conversion Efficiency of InGaN Photovoltaic Devices Grown on Patterned Sapphire Substrates
2011
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Effects of the narrow band gap on the properties of InN
2002
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
On Choosing Phosphors for Near-UV and Blue LEDs for White Light
2015
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Thick-Shell CuInS2/ZnS Quantum Dots with Suppressed “Blinking” and Narrow Single-Particle Emission Line Widths
2017
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Vacancies and interstitials in indium nitride: Vacancy clustering and molecular bondlike formation from first principles
2009
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2007 StandoutNobel
When group-III nitrides go infrared: New properties and perspectives
2009
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell
2011
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Radiative Transitions of Singlet Oxygen: New Tools, New Techniques and New Interpretations
1999
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Beyond methylammonium lead iodide: prospects for the emergent field of ns2containing solar absorbers
2016
In situ X-ray diffraction monitoring of GaInN/GaN superlattice during organometalic vapor phase epitaxy growth
2013 StandoutNobel
High Tolerance to Iron Contamination in Lead Halide Perovskite Solar Cells
2017 StandoutNobel
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Conversion Efficiency Enhancement of GaN/In$_{0.11}$Ga$_{0.89}$N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process
2011
Correlation between strain, optical and electrical properties of InN grown by MBE
2003
Searching for “Defect-Tolerant” Photovoltaic Materials: Combined Theoretical and Experimental Screening
2017 StandoutNobel
Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN
2003
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
2008
Works of А. В. Мудрый being referenced
Spectral shifts of the luminescence bands of singlet molecular oxygen in different solvents
1990
Excited states of the A free exciton in CuInS2
2008
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2002
Excited states of the free excitons in CuInSe2 single crystals
2010
Reply to ?Comment on ?Band Gap of InN and In-Rich InxGa1-xN Alloys (0.36 < x < 1)??
2002
Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics
2014
Thermally-induced defects in silicon containing oxygen and carbon
1981
Energy of excitons in CuInS2 single crystals
2006
Band Gap of Hexagonal InN and InGaN Alloys
2002