A. Terao

Nanowire transistors without junctions

The impact of irritable bowel syndrome on health-related quality of life

MULTIPLE COMPARISON PROCEDURES UPDATED

A review of Ga2O3 materials, processing, and devices

Nanoscale CMOS

Spintronics: Fundamentals and applications

Semiconductor thickness effects in the double-gate SOI MOSFET

FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

Analytical model for the high-temperature behaviour of the subthreshold slope in MuGFETs

Wafer-Bonding and Thinning Technologies

Dose radiation effects in FinFETs

Formation of High-Quality CdTe, CdSe, and CdS Nanocrystals Using CdO as Precursor

Quasi-Two-Dimensional h-BN/β-Ga₂O₃ Heterostructure Metal–Insulator–Semiconductor Field-Effect Transistor

Fundamentals of Modern VLSI Devices

Radiation Effects in MOS Oxides

Radiation-hard design for SOI MOS inverters

Effects of total-dose irradiation on gate-all-around (GAA) devices

Purposes of three-dimensional circuits

Characteristics of nMOS/GAA (Gate-All-Around) transistors near threshold

Modeling of ultrathin double-gate nMOS/SOI transistors

Demonstration of the potential of accumulation-mode MOS transistors on SOI substrates for high-temperature operation (150-300 degrees C)

Power evaluation of various modified bonferroni procedures by a monte carlo study