Citation Impact

Citing Papers

Spin-lattice relaxation in rare-earth salts
1961
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Efficient perovskite solar cells via improved carrier management
2021 StandoutNatureNobel
Shedding light on the cell biology of extracellular vesicles
2018 Standout
Quantum computers
2010 StandoutNature
Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
2009 Standout
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Homonuclear broad band decoupling and two-dimensional J-resolved NMR spectroscopy
1976 StandoutNobel
Molecular coherent-potential approximation for zinc-blende pseudobinary alloys
1987
Band structure of semiconductor alloys
1988
High-resolution time resolved spectroscopy of collisionless molecular beams. II. Energy randomization and optical phase relaxation of molecules in crossed laser and molecular beams
1978 StandoutNobel
Blue Light Emitting Defective Nanocrystals Composed of Earth‐Abundant Elements
2019 StandoutNobel
Nuclear Interactions and Rotational Moment ofF2
1964 StandoutNobel
Bond statistics and their influence on materials properties of III-V quaternary alloys of type (AB)III(CD)V
1988
Reduced symmetry and the band structure of semiconductor alloys
1986
Theory and applications of ion-selective electrodes
1972
Effect of different cation-anion bond strengths on metal–ternary-semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe
1986 StandoutNobel
Band-gap bowing in Ga1−xInxN alloys
1997
Optical bowing in zinc chalcogenide semiconductor alloys
1986
Special quasirandom structures
1990 Standout
Local valence-band densities of states ofAlxGa1−xAs
1988
Spintronics: Fundamentals and applications
2004 Standout
Crystallographic, Thermoelectric, and Mechanical Properties of Polycrystalline Ba8Al x Si46−x Clathrates
2013
Ternary I−III−VI Quantum Dots Luminescent in the Red to Near-Infrared
2008 StandoutNobel
Electronic structure of III-V semiconductors and alloys using simple orbitals
1980
Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface
1986 StandoutNobel
First-principles calculations of gap bowing inInxGa1−xNandInxAl1−xNalloys: Relation to structural and thermodynamic properties
2002
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa1−xInxN/GaNheterostructures and the model of polarized homogeneous quantum wells
2000 StandoutNobel
Advanced thermoelectrics governed by a single parabolic band: Mg2Si0.3Sn0.7, a canonical example
2014
Crystallization by particle attachment in synthetic, biogenic, and geologic environments
2015 StandoutScience
Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications
2012 Standout
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Optical properties ofIn1−xGaxAsyP1−yfrom 1.5 to 6.0 eV determined by spectroscopic ellipsometry
1982
Thermodynamics of Multicomponent Perovskites: A Guide to Highly Efficient and Stable Solar Cell Materials
2020
Defect physics of theCuInSe2chalcopyrite semiconductor
1998
Pulsed NMR in solids
1971
NK-edge x-ray-absorption study of heteroepitaxial GaN films
1997 StandoutNobel
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
2005 StandoutScience
Spin lifetimes of electrons injected into GaAs and GaN
2003
Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations
2002
Influence of preparation conditions on thermoelectric properties of Ba8Ga16Si30clathrate by combining arc melting and spark plasma sintering methods
2012
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
First-principles calculation of alloy phase diagrams: The renormalized-interaction approach
1989
Noble-metal–CdTe interface formation
1988 StandoutNobel
Isotopic Impurity Tunneling in SolidHe4
1971 StandoutNobel
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Structural analysis of InxGa1−xN single quantum wells by coaxial-impact collision ion scattering spectroscopy
2000 StandoutNobel
Cross-sectional imaging of pendeo-epitaxial GaN using continuous-wave two-photon microphotoluminescence
2002 StandoutNobel
Simulation of visible and ultra-violet group-III nitride light emitting diodes
2005
Al and Ga contributions to the density of states ofAlxGa1−xAs
1989
Electronic structure ofPb1−xSrxS. Application of the Haydock recursion method
1983
Band gaps and spin-orbit splitting of ordered and disorderedAlxGa1−xAsandGaAsxSb1−xalloys
1989
Overlayer-cation reaction at the Pt/Hg_{1-x}Cd_{x}Te interface
1987 StandoutNobel
Unique Role of Refractory Ta Alloying in Enhancing the Figure of Merit of NbFeSb Thermoelectric Materials
2017
Ab initiomulticenter tight-binding model for molecular-dynamics simulations and other applications in covalent systems
1989
Influence of Conformation on Conductance of Biphenyl-Dithiol Single-Molecule Contacts
2009 StandoutNobel
Interactions between cleaved (Hg,Cd)Te surfaces and deposited overlayers of Al and In
1985
Electronic structure ofHg1−xCdxTe
1983
Electronic structure of ZnS, ZnSe, ZnTe, and their pseudobinary alloys
1987
Tight-binding view of alloy scattering in III-V ternary semiconducting alloys
1984
Stability of bulk and pseudomorphic epitaxial semiconductors and their alloys
1988
Role of metaldstates in II-VI semiconductors
1988
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Electrical Properties of Self-Assembled Branched InAs Nanowire Junctions
2008
Electronic properties of random alloys: Special quasirandom structures
1990 Standout
Lattice distortion in Cu-based dilute alloys: A first-principles study by the KKR Green-function method
1997
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Low Electron Scattering Potentials in High Performance Mg2Si0.45Sn0.55 Based Thermoelectric Solid Solutions with Band Convergence
2013
Beneficial Contribution of Alloy Disorder to Electron and Phonon Transport in Half‐Heusler Thermoelectric Materials
2013
The Role of Boltzmann Factors in Line Shape
1966 StandoutNobel
Nanoscale Characterization of Carrier Dynamic and Surface Passivation in InGaN/GaN Multiple Quantum Wells on GaN Nanorods
2016
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Bond lengths around isovalent impurities and in semiconductor solid solutions
1984
Suppressing the bipolar contribution to the thermoelectric properties of Mg2Si0.4Sn0.6 by Ge substitution
2015 StandoutNobel
Orbital-dependent density functionals: Theory and applications
2008
Low field electron-nuclear spin coupling in gallium arsenide under optical pumping conditions
1977
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Extended x-ray-absorption fine-structure study ofGa1−xInxAsrandom solid solutions
1983
The SIESTA method forab initioorder-Nmaterials simulation
2002 Standout
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
Carrier-Based Ion-Selective Electrodes and Bulk Optodes. 2. Ionophores for Potentiometric and Optical Sensors
1998 Standout
Polymorphic Phase Control Mechanism of Organic–Inorganic Hybrid Perovskite Engineered by Dual-Site Alloying
2017
Theory and applications of the density matrix
1961
Average Bond Lengths and Atom Arrangement in In1-xGaxAs and GaAs1-xPx III-V Ternary Alloy Semiconductors
1987
Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted, gas-source molecular beam epitaxy
1993 StandoutNobel
Picosecond Z-scan measurements on bulk GaN crystals
2001
Suppression of phase separation in InGaN due to elastic strain
1998
Isotope effects on the optical spectra of semiconductors
2005
Reactive Scattering in Molecular Beams: Velocity Analysis of KBr Formed in the K+Br2 Reaction
1966 StandoutNobel
Atomistic theory of transport in organic and inorganic nanostructures
2004
When group-III nitrides go infrared: New properties and perspectives
2009
HgCdTe-Cr interface chemistry
1984
Disorder effect on the photoabsorption of III-V semiconductor alloys
1984
Energy band-gap bowing parameter in an AlxGa1−x N alloy
1987 StandoutNobel
ON THE NUCLEAR SPIN RELAXATION IN HYDROGEN GAS
1961
Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)
1994 StandoutNobel
Nonequilibrium Chemical Excitation and Chemical Pumping of Lasers
1965
First-principles calculation of temperature-composition phase diagrams of semiconductor alloys
1990
Electronic structure and bonding at SiC/AlN and SiC/BP interfaces
1991
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN
2000
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
2011
From molecules to solids with the DMol3 approach
2000 Standout
Observation of the Jahn-Teller Splitting of Three-Valentd7Ions Via Orbach Relaxation
1964 StandoutNobel
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Searching for “Defect-Tolerant” Photovoltaic Materials: Combined Theoretical and Experimental Screening
2017 StandoutNobel
Effective masses and valence-band splittings in GaN and AlN
1997
Method for Correction of Accumulated Error in 180° Pulses in Carr-Purcell Experiment
1964
Coupling mechanisms for optically induced NMR in GaAs quantum wells
2002
Effects of Chemical and Structural Disorder in Semiconducting Pseudobinary Alloys
1984

Works of A. Sher being referenced

Systematics of chemical and structural disorder on band-edge properties of semiconductor alloys
1988
Bandstructure effect on high-field transport in GaN and GaAlN
1997
Sensitivity of defect energy levels to host band structures and impurity potentials in CdTe
1985
Theory of AlN, GaN, InN and their alloys
1997
Field-Swept Carr-Purcell Experiment
1960
Generalized Brooks’ formula and the electron mobility in SixGe1−x alloys
1985
Semiconductor Alloys: Local Bond Lengths, Mixing Enthalpies, and Microclusters
1985
Phase diagram and local correlations in pseudobinary alloys
1987
Semiconductor pseudobinary alloys: Bond-length relaxation and mixing enthalpies
1985
Nuclear-magnetic-resonance detection of charge defects in gallium arsenide
1974
Construction of orthonormal local orbitals and application to zinc-blende semiconductors
1982
Transport Properties of LaF3
1966
Electrically induced shifts of the GaAs nuclear spin levels
1979
Approach to Equilibrium in Quantal Systems: Magnetic Resonance
1960
Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds
1983
NON-EQUILIBRIUM DISTRIBUTIONS OF MOLECULAR VIBRATIONAL STATES
1963
Electronic structure of pseudobinary semiconductor alloysAlxGa1−xAs,GaPxAs1−x, andGaxIn1−xP
1981
Calculation of the electronic properties of pseudo-binary semiconductor alloys
1981
Temperature dependence of band gaps in HgCdTe and other semiconductors
1995
Velocity-field characteristics of III-V semiconductor alloys: Band structure influences
1987
Gap Variation in Semiconductor Alloys and the Coherent-Potential Approximation
1978
Quasichemical approximation in binary alloys
1987
Unusual behavior of Hgl−xCdxTe and its explanation
1983
Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy,Hg1−xCdxTe
1982
Polarization in LaF3
1966
Two-photon absorption in GaN, GaInN, and GaAlN alloys
2000
Coherent-potential-approximation calculation of the valence bands of the quaternary alloyInxGa1−xAsyP1−y
1979
Deformation potential and intervalley scattering: Hot-electron transistor analysis
1988
Defect equilibrium in HgTe
1992
Valence-band structures of III-V compounds and alloys—Bond-orbital and coherent-potential approximations
1978
Rankless by CCL
2026