Citation Impact
Citing Papers
High Mobility inLaAlO 3 / SrTiO 3
2007 StandoutNobel
X-ray photoelectron diffraction from (3×3) and (√3×√3)R 30° (0001)Si 6H–SiC surfaces
1998 StandoutNobel
Photoluminescence spectra of Ga-doped and Al-doped 4H-SiC
1977 StandoutNobel
Pt and PtSix Schottky contacts on n-type β-SiC
1989
Annealing Effects on Al and AN-Si Contacts with 3C–SiC
1986
A critical review of ohmic and rectifying contacts for silicon carbide
1995 StandoutNobel
Growth of High-Mobility 3C-SiC Epilayers by Chemical Vapor Deposition
1988
Electron Mobility Measurements in SiC Polytypes
1967
Fighting at the Interface: Structural Evolution during Heteroepitaxial Growth of Cyanometallate Coordination Polymers
2018 StandoutNobel
Enabling nanotechnology with self assembled block copolymer patterns
2003 Standout
Novel behaviour of iron moments in new magnetic systems RuFeSi and RuFeB
1983
Electron emission from diamond coated silicon field emitters
1994
Effect of Substrate Orientation on Interfacial and Bulk Character of Chemically Vapor Deposited Monocrystalline Silicon Carbide Thin Films
1990 StandoutNobel
High Electron Mobility of Cubic SiC
1966
Hall measurements as a function of temperature on monocrystalline SiC thin films
1990 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
1988 StandoutNobel
High-field transport in wide-band-gap semiconductors
1975
Epitaxial thin film growth, characterization and device development in monocrystalline α- and β-silicon carbide
1992 StandoutNobel
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Electrical and optical properties of TiO2 anatase thin films
1994 Standout
Semiconductor-to-Metal Transition inn
1968
Schottky barrier diodes on 3C-SiC
1985
Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates
1989 StandoutNobel
Decoherence, einselection, and the quantum origins of the classical
2003 Standout
Antiphase-domain-free growth of cubic SiC on Si(100)
1987
High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition
1984
Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor deposition
1987 StandoutNobel
Peer Reviewed: Silicon Micromachining: Sensors to Systems
1996
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Epitaxial growth and doping of and device development in monocyrstalline β-SiC semiconductor thin films
1989 StandoutNobel
Transport phenomena in nanofluidics
2008 Standout
Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
1997 StandoutNobel
Epitaxial growth of β-SiC thin films on 6H α-SiC substrates via chemical vapor deposition
1986 StandoutNobel
Free-to-bound transition in β-SiC doped with boron
1975
Interface structures in beta-silicon carbide thin films
1987 StandoutNobel
Transmission electron microscopy of process-induced defects in β-SiC thin films
1986 StandoutNobel
Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
1997 StandoutNobel
High-temperature depletion-mode metal-oxide-semiconductor field-effect transistors in beta-SiC thin films
1987 StandoutNobel
Schottky-barrier field-effect transistors of 3C-SiC
1986
Layer-by-layer growth of SiC at low temperatures
1993 StandoutNobel
Fabrication of 0.1 μm gate aperture Mo-tip field-emitter arrays using interferometric lithography
1999
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films
1988 StandoutNobel
Metal Schottky barrier contacts to alpha 6H-SiC
1992 StandoutNobel
Gas-source molecular beam epitaxy of monocrystalline β–SiC on vicinal α(6H)–SiC
1993 StandoutNobel
The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films
1988 StandoutNobel
Uncertainty, topography, and work function
1995
Selective-area regrowth of GaN field emission tips
1997
Low-temperature growth and its growth mechanisms of 3C-SiC crystal by gas source molecular beam epitaxial method
1990
Chemistry, microstructure, and electrical properties at interfaces between thin films of platinum and alpha (6H) silicon carbide (0001)
1995 StandoutNobel
Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C
1987
SiC blue LED's by liquid-phase epitaxy
1977 StandoutNobel
Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
1987
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
1998 StandoutNobel
Growth of 6H-SiC on CVD-Grown 3C-SiC Substrates
1989
Chemistry, microstructure, and electrical properties at interfaces between thin films of cobalt and alpha (6H) silicon carbide (0001)
1995 StandoutNobel
Mechanisms of SiC growth by alternate supply of SiH2Cl2 and C2H2
1994
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
1997 StandoutNobel
Electron cyclotron resonance in cubic SiC
1985 StandoutNobel
Epitaxial growth of 3C-SiC on Si by low-pressure chemical vapor deposition
1986
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
1998 StandoutNobel
Structural and Optical Properties of Silicon Carbide Powders Synthesized from Organosilane Using High-Temperature High-Pressure Method
2021 StandoutNobel
Electrical properties of ion-implanted p-n junction diodes in β-SiC
1988 StandoutNobel
Defects in neutron irradiated SiC
1987 StandoutNobel
Sodium/Calcium Exchange: Its Physiological Implications
1999 Standout
Phase transitions and heterophase fluctuations
1991 Standout
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
1997 StandoutNobel
Deposition and characterization of diamond, silicon carbide and gallium nitride thin films
1994 StandoutNobel
Effect of acceptor impurity addition in low temperature growth of 3C-SiC
1991
3C-SiC hetero-epitaxial growth on undulant Si(001) substrate
2002
Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
1999 StandoutNobel
Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure
1991
Carbonization process for low-temperature growth of 3C-SiC by the gas-source molecular-beam epitaxial method
1990
Rapid Prototyping of Microfluidic Systems in Poly(dimethylsiloxane)
1998 Standout
Site effect on the impurity levels in4 H 6 H 1 5 R
1980
Hot electron microwave conductivity of wide bandgap semiconductors
1976
Glass-to-glass electrostatic bonding with intermediate amorphous silicon film for vacuum packaging of microelectronics and its application
2001
Works of A. Rosengreen being referenced
Field-emitter-array development for high-frequency operation
1993
Growth and Properties of β-SiC Single Crystals
1966
Field-emitter arrays for vacuum microelectronics
1991
High-resolution simulation of field emission
1990