Immediate Impact
3 from Science/Nature 19 standout
Citing Papers
Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronic applications: A comprehensive review
2024 Standout
GaN-based power devices: Physics, reliability, and perspectives
2021 Standout
Works of A. Platzker being referenced
An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications
1993
A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications
1993
Author Peers
| Author | Last Decade | Papers | Cites | |||
|---|---|---|---|---|---|---|
| A. Platzker | 139 | 85 | 50 | 15 | 179 | |
| G. Goujon | 54 | 109 | 33 | 13 | 164 | |
| Larry Carr | 226 | 179 | 34 | 15 | 274 | |
| M. Lui | 214 | 148 | 44 | 23 | 270 | |
| Yihan Li | 183 | 185 | 12 | 22 | 252 | |
| R. Lai | 208 | 87 | 27 | 15 | 226 | |
| Frank Schnieder | 265 | 71 | 59 | 24 | 287 | |
| G. Ducournau | 213 | 106 | 51 | 17 | 255 | |
| Fuyu Sun | 42 | 122 | 51 | 22 | 204 | |
| Simon J. Mahon | 138 | 51 | 55 | 26 | 150 | |
| Haiyong Xu | 217 | 54 | 15 | 14 | 228 |
All Works
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