A. Parisini

Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting

Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

Dependence of Resonance Energy Transfer on Exciton Dimensionality

Entropy-stabilized oxides

A critical review of high entropy alloys and related concepts

A review of Ga2O3 materials, processing, and devices

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Thermoreflectance study of the direct energy gap of GaSb

Organic electrochemical transistors

Hydrogel bioelectronics

Hydrogel ionotronics

Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates

Phosphors in phosphor-converted white light-emitting diodes: Recent advances in materials, techniques and properties

Band parameters for III–V compound semiconductors and their alloys

Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale

Thermoreflectance study of the direct optical gap in epitaxialAlxGa1−xSb(x<~0.5)

The physics and technology of gallium antimonide: An emerging optoelectronic material

Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

Direct- and indirect-energy-gap dependence on Al concentration inAlxGa1−xSb(x<~0.41)

High-entropy alloys

Band parameters for nitrogen-containing semiconductors

Optical absorption near the fundamental absorption edge in GaSb

EXAFS study of mixed crystals of the AIIBIII2XVI4 family

Polysaccarides-based gels and solid-state electronic devices with memresistive properties: Synergy between polyaniline electrochemistry and biology

ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors

Analysis of the scattering mechanisms controlling electron mobility inβ-Ga₂O₃crystals

Hall and photo-Hall effect measurements on sulphur-doped GaSb

Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization

Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy