Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Continuous injection synthesis of indium arsenide quantum dots emissive in the short-wavelength infrared
2016 StandoutNobel
Developing optofluidic technology through the fusion of microfluidics and optics
2006 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
GaAs lower conduction-band minima: Ordering and properties
1976
Anisotropic effective masses of electrons in AlAs
1972
Acceptor energy level for Zn in Ga1−xAlxAs
1980
Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs
1978
Organic and solution-processed tandem solar cells with 17.3% efficiency
2018 StandoutScience
Upconversion and Anti-Stokes Processes with f and d Ions in Solids
2003 Standout
Electroreflectance and Band Structure ofGa x In 1 − x P
1972
Dynamical aspects of luminescence from GaAs-AlAs single quantum wells under hydrostatic pressure
1989 StandoutNobel
Properties of the electron-hole liquid in GaP
1979
Cyclotron Resonance in the Conduction Band of GaP in Very High Magnetic Fields
1983
Observation of Optical Phonons Bound to Neutral Donors
1970 StandoutNobel
Photovoltaic materials: Present efficiencies and future challenges
2016 StandoutScience
Cyclotron resonance in n-type In1−xGaxAsyP1−y
1979 StandoutNobel
Deformation potentials of the direct and indirect absorption edges of GaP
1979
The optical processes in AlInP/GaInP/AlInP quantum wells
1996
Scattering parameters from an analysis of the hall electron mobility in Ga1−Al As alloys
1982
Special quasirandom structures
1990 Standout
Cyclotron resonance of holes in GaP
1972
Halide Perovskite Photovoltaics: Background, Status, and Future Prospects
2019 Standout
Non‐Γ Deep Levels and the Conduction Band Structure of Ga1−xAlxAs Alloys
1981
The conduction band structures of GaAs and InP
1973
Optical properties of AlxIn1−xP grown by organometallic vapor phase epitaxy
1987
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses
1981 StandoutNobel
Wide-bandwidth distributed Bragg reflectors usingoxide/GaAs multilayers
1994
Expanded Theory of H- and J-Molecular Aggregates: The Effects of Vibronic Coupling and Intermolecular Charge Transfer
2018 Standout
Liquid phase epitaxial growth of GaxIn1−xP
1972
Photoluminescence of lattice-matched In1−xGaxP1−yAsy layers on GaAs
1980 StandoutNobel
Temperature dependence of semiconductor band gaps
1991 Standout
Donor levels and the microscopic structure of theDXcenter inn-type Si-dopedAl x Ga 0.51 − x In 0.49
1996
Theory of binding energies of acceptors in semiconductors
1977
Enhanced Indirect Optical Absorption in AlAs and GaP
1972
Electrons and optic phonons in solids-the effects of longitudinal optical lattice vibrations on the electronic excitations of solids
1973
Thermal conductivity of Ga1−xAlxAs alloys
1973
Optical properties of AlAs
1987
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI)
2017 StandoutNobel
Liquid Exfoliation of Layered Materials
2013 StandoutScience
No-phonon and phonon-assisted transitions in indirectGa As 1 − x P x
1977
Three- and low-dimensional inorganic semiconductors
1997
Negative group-velocity dispersion using refraction
1984
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Graphene-Like Two-Dimensional Materials
2013 Standout
Raman scattering in (GaP) 1 ) 1
1989 StandoutNobel
Electroreflectance and Wavelength Modulation Study of the Direct and Indirect Fundamental Transition Region of In1−xGaxP
1976
Effect of Uniaxial Stress and Doping on the One‐Phonon Raman Spectrum of GaP
1974
Terahertz-Driven Stark Spectroscopy of CdSe and CdSe–CdS Core–Shell Quantum Dots
2019 StandoutNobel
Exciton localisation at impurity pairs in zinc telluride and indium phosphide
1978
On laser annealing and lattice melting
1980
The dielectric function of AlSb from 1.4 to 5.8 eV determined by spectroscopic ellipsometry
1989
Localization and percolation in semiconductor alloys: GaAsN vs GaAsP
1996
Composition dependence of interband transition intensities in GaPN, GaAsN, and GaPAs alloys
1997
Electron effective mass and band-gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP
1992
Effect of uniaxial stress on free and bismuth‐bound excitions in InP
1979
Electron transport and band structure ofGa 1 − x Al x As
1980
Growth of AlGaN/GaN/AlGaN double heterojunction field-effect transistors and the observation of a compositional pulling effect
2009 StandoutNobel
Theory of hot-electron magnetophonon resonance in quasi-two-dimensional quantum-well structures
1992 StandoutNobel
Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition
1996
Semiconductor superfine structures by computer-controlled molecular beam epitaxy
1976 Nobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Conduction band structure of GaInP
1977
Effect of Lattice Mismatch on the Solidus Compositions of GaxIn1-xP Liquid Phase Epitaxial Crystals
1983
Electronic band structure of AlGaInP grown by solid-source molecular-beam epitaxy
1994
Promises and challenges of perovskite solar cells
2017 StandoutScience
Free-exciton transitions in the optical absorption spectra ofGa As 1 − x P x
1976
About the band structure of GaxIn1−xP alloys
1972
Two-dimensional photonic-bandgap structures operating at near-infrared wavelengths
1996 StandoutNature
Electronic structure of pseudobinary semiconductor alloysAl x Ga 1 − x As Ga P x As 1 − x Ga x In 1 − x P
1981
Photoluminescence of AlxGa1-xAs near the Γ-X crossover
1987
Terahertz-Driven Luminescence and Colossal Stark Effect in CdSe–CdS Colloidal Quantum Dots
2017 StandoutNobel
The electronic structure of impurities and other point defects in semiconductors
1978
The complex form of donor energy levels in gallium phosphide
1977
Temperature dependence of I–V characteristics and performance parameters of silicon solar cell
2008
Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array
2015
Modeling a.c. thin-film electroluminescent devices
1981
Extrinsic gettering via the controlled introduction of misfit dislocations
1985 StandoutNobel
Sample-Averaged Biexciton Quantum Yield Measured by Solution-Phase Photon Correlation
2014 StandoutNobel
Size dependence of exciton fine structure in CdSe quantum dots
1996 StandoutNobel
Selective Transmission of High-Frequency Phonons by a Superlattice: The "Dielectric" Phonon Filter
1979 StandoutNobel
Excited states of the Zn and C acceptors inAl 0.47 Ga 0.53
1983
Electron-hole plasma in direct-gapGa 1 − x Al x k
1984
Refractive index of AlxGa1−xAs between 1.2 and 1.8 eV
1974
Energy bands of ternary alloy semiconductors: Coherent-potential-approximation calculations
1983
Electronic energy levels inGa 1 − x Al x Sb
1975
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Energy band structure of AlxGa1-xAs
1977
Electron mobility inGa 1 − x Al x As
1981
Molybdenum sulfides—efficient and viable materials for electro - and photoelectrocatalytic hydrogen evolution
2012
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
2017 Standout
Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gaps
1976
Liquid Crystal adiSplay Research: The First Fifteen Years
1983
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Angular Momentum Theory and Localized States in Solids. Investigation of Shallow Acceptor States in Semiconductors
1970
Single Nanocrystal Spectroscopy of Shortwave Infrared Emitters
2018 StandoutNobel
Compositional Varied Core–Shell InGaP Nanowires Grown by Metal–Organic Chemical Vapor Deposition
2019
Helium diffraction from the GaAs(110) surface and the generation of helium-surface potentials
1982 StandoutNobel
Site-selective x-ray absorption fine structure: Selective observation of Ga local structure in DX center of Al0.33Ga0.67As:Se
1999 StandoutNobel
Fundamental Energy Gaps of AlAs and Alp from Photoluminescence Excitation Spectra
1973
General relation between band-gap renormalization and carrier density in two-dimensional electron-hole plasmas
1987 StandoutNobel
Two-Dimensional Electron Gas at GaAs/Ga0.52In0.48P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
1986
Enhanced Hydrogen Evolution Catalysis from Chemically Exfoliated Metallic MoS2 Nanosheets
2013 Standout
Structural Origin of Optical Bowing in Semiconductor Alloys
1983
Energy band-gap bowing parameter in an AlxGa1−x N alloy
1987 StandoutNobel
Measurement of Emission Lifetime Dynamics and Biexciton Emission Quantum Yield of Individual InAs Colloidal Nanocrystals
2014 StandoutNobel
Photoluminescence of AlxGa1−xAs alloys
1994
Indirect exciton fine structure in GaP and the effect of uniaxial stress
1978
Bandgap and lattice constant of GaInAsP as a function of alloy composition
1974
Energy bandgap and lattice constant contours of iii–v quaternary alloys
1978
Intense few-cycle laser fields: Frontiers of nonlinear optics
2000 StandoutNobel
Nitrogen states in Ga(As,P) and the long-range, short-range model: A systematic study
1980
Indirect Absorption Edge of (GaP)x(InAs)l−x Mixed Crystals
1976
Electron-phonon and exciton-phonon bound states
1973
Band gap versus composition and demonstration of Vegard’s law for In1−xGaxAsyP1−y lattice matched to InP
1978
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
1978 StandoutNobel
Calculation of energy band gaps in quaternary iii/v alloys
1981
Defects in silicon
1982
Organic–Inorganic Perovskites: Structural Versatility for Functional Materials Design
2016 Standout
Observation of quantum wire formation at intersecting quantum wells
1992 StandoutNobel
Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System
1980 StandoutNobel
Works of A. Onton being referenced
Anomalous Width of Some Photoexcitation Lines of Impurities in Silicon
1967
Electronic Structure and Luminescence Processes in In1−xGaxP Alloys
1971
Conduction Bands in In1−xAlxP
1970
Indirect, Γ8v-X1c, band gap in GaAs1−xPx
1972
Spectroscopic Investigation of Group-III Acceptor States in Silicon
1967
Optical properties and band structure of III–V compounds and alloys
1973
Free-exciton-impurity interaction in AlAs
1974
Rotational Levels of Shallow Acceptor States: The Undulation Spectra of N in GaP
1972
Optical characterization of compound semiconductor alloys
1974
Evidence of Intervalley Scattering of Electrons in the Extrinsic Photoconductivity ofn
1969
Fast photoconductor coupled liquid-crystal light valve
1979
Effect of Uniaxial Stress on Excitons Bound to Bismuth in GaP
1970
Spectroscopic Study of Tellurium Donors in GaP
1970
Electroluminescence efficiency profiles of Mn in ZnS ac thin-film electroluminescence devices
1979
Refractive Index of AlAs
1971
Photoluminescence Processes inIn 1 − x Ga x P
1971
Optical Absorption Due to Excitation of Electrons Bound to Si and S in GaP
1969
Donor-Electron Transitions between States Associated with theX 1 c X 3 c
1971
The memory effect of ZnS : Mn ac thin-film electroluminescence
1977
Filamentary AC electroluminescence in ZnS:Mn
1979
Temperature dependence of the band gap of silicon
1974