A. M. Mintairov

Structural and Optoelectronic Characterization of RF Sputtered ZnSnN₂

SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications

Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

Luminescence properties of defects in GaN

Synthesis cost dictates the commercial viability of lead sulfide and perovskite quantum dot photovoltaics

Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Band parameters for III–V compound semiconductors and their alloys

Mechanism for photoluminescence in anInyAs1−yN/InxGa1−xAssingle quantum well

Research opportunities to advance solar energy utilization

Chemistry and Properties of Nanocrystals of Different Shapes

Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes

Low-Cost Synthesis of Highly Luminescent Colloidal Lead Halide Perovskite Nanocrystals by Wet Ball Milling

Phonons and related crystal properties from density-functional perturbation theory

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry

Band parameters for nitrogen-containing semiconductors

First-principles theory of the evolution of vibrational properties with long-range order inGaInP2

Phonon modes of [111] GaP/InP monolayer superlattices in Raman spectra of spontaneously ordered GaInP

Mechanochemical synthesis of methylammonium lead iodide perovskite

Study of tunneling transport of carriers in structures with an InGaN/GaN active region

Infrared spectroscopy of ZnSiN2 single-crystalline films on r-sapphire

Ordering effects in Raman spectra of coherently strainedGaAs1−xNx

Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm