Citation Impact
Citing Papers
Entanglement Entropy of theν = 1 / 2
2015 StandoutNobel
Critical Behavior of the Ferromagnetic PerovskiteBaRuO 3
2008 StandoutNobel
Nature of theA CeCu 2 Si 2
2004
Superconductivity inC e C o I n 5 − x S n x
2005
Non-Fermi Liquid States in the PressurizedCeCu 2 ( Si 1 − x Ge x ) 2
2006
2000
Unconventional superconductivity in magic-angle graphene superlattices
2018 StandoutNature
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells
2012
Singular or non-Fermi liquids
2002
Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces
2004
Electron scattering near an itinerant to localized electronic transition
2003 StandoutNobel
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Non-Fermi-Liquid Behavior at a Ferromagnetic Quantum Critical Point inNi x Pd 1 − x
1999
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Localization potentials in AlGaN epitaxial films studied by scanning near-field optical spectroscopy
2011
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes
2013 StandoutNobel
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Observation of Two Distinct Superconducting Phases in CeCu 2 Si 2
2003 Science
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Superconducting and normal properties of CeCu2Ge2 at high pressure
1998
Buried stressors in nitride semiconductors: Influence on electronic properties
2005
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Magnetotransport in nearly antiferromagnetic metals
2000
On the optical polarization properties of semipolar InGaN quantum wells
2011
Non-Fermi-Liquid Effects at Ambient Pressure in a Stoichiometric Heavy-Fermion Compound with Very Low Disorder:CeNi 2 Ge 2
1999
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate
2008
Quantum criticality in heavy-fermion metals
2008
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
Impact of active layer design on InGaN radiative recombination coefficient and LED performance
2012
Confinement effects on valence-subband character and polarization anisotropy in (112¯2) semipolar InGaN/GaN quantum wells
2012
Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position
2004 StandoutNobel
Screening dynamics of intrinsic electric field in AlGaN quantum wells
2008
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Simulation of visible and ultra-violet group-III nitride light emitting diodes
2005
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
2009
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Theories of non-Fermi liquid behavior in heavy fermions
1999
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling
2002
Calculation of electric field and optical transitions in InGaN∕GaN quantum wells
2005
Superconducting phases off
2009
Magnetically mediated superconductivity in heavy fermion compounds
1998 StandoutNature
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
2011
Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)
2008
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Carrier lifetimes in AlGaN quantum wells: electric field and excitonic effects
2008
Non-Fermi-liquid behavior ind f
2001
Piezoelectric fields in GaInN∕GaN quantum wells on different crystal facets
2006
Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
2009
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Heavy-fermion superconductivity in CeCoIn5at 2.3 K
2001
Heavy-fermion systems at the magnetic-nonmagnetic quantum phase transition
1998
Twenty-five years of heavy-fermion superconductivity
2005
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Modulation spectroscopy of AlGaN/GaN heterostructures: The influence of electron–hole interaction
2007
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Superconductivity in heavy-fermionCeRh 2 Si 2
1996
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
Fermi-liquid instabilities at magnetic quantum phase transitions
2007 Standout
Synchrotron X-ray diffraction and absorption studies of CeM2X2 (M=Cu, Ni and X=Si, Ge) at high pressure
2005 StandoutNobel
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Tuning of a non-Fermi-liquid state in CeNiGa 2
1998
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
2013 StandoutNobel
Interplay of Disorder and Spin Fluctuations in the Resistivity near a Quantum Critical Point
1999
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Works of A. Link being referenced
CeCu2Si2 AND UBe13: NEW QUESTIONS—OLD ANSWERS?
1998
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Dependence of magnetism on hybridization in Ce(Cu1−xNix)2Ge2
1995
Quantum critical phenomena in undoped heavy-fermion metals
1996
Breakup of Heavy Fermions on the Brink of “PhaseA CeCu 2 Si 2
1998
Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN
2003
Pressure Studies near Quantum Phase Transitions in Strongly Correlated Ce Systems.
1998
Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization‐doped 3D electron slabs in graded‐AlGaN
2003
The effect of composition on the occurrence of a second phase transition in the vicinity of Tc in CeCu2Si2
1995
Determination of the polarization discontinuity at the AlGaN∕GaN interface by electroreflectance spectroscopy
2005
New observations concerning magnetism and superconductivity in heavy-fermion metals
1996
Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG
2002