Citation Impact
Citing Papers
Effect ofCYP2B6,ABCB1, andCYP3A5Polymorphisms on Efavirenz Pharmacokinetics and Treatment Response: An AIDS Clinical Trials Group Study
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Allograft transduction of IL-10 prolongs survival following orthotopic liver transplantation
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Synergistically Enhanced CYP2B6 Inducibility between a Polymorphic Mutation in CYP2B6 Promoter and Pregnane X Receptor Activation
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Efavirenz in the therapy of HIV infection
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Molecular Mechanisms of Depression: Perspectives on New Treatment Strategies
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Effect of CYP2B6*6 and CYP2C19*2 genotype on chlorpyrifos metabolism
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Functional pharmacogenetics/genomics of human cytochromes P450 involved in drug biotransformation
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Use of therapeutic drug monitoring in HIV disease
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Aberrant Splicing Caused by Single Nucleotide Polymorphism c.516G>T [Q172H], a Marker of CYP2B6*6, Is Responsible for Decreased Expression and Activity of CYP2B6 in Liver
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Cytochrome P450 2B6 516G→T is associated with plasma concentrations of nevirapine at both 200 mg twice daily and 400 mg once daily in an ethnically diverse population
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Cytochrome P450 enzymes in drug metabolism: Regulation of gene expression, enzyme activities, and impact of genetic variation
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Antiretroviral Treatment of Adult HIV Infection
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Raman scattering from phonon-polaritons in GaN
2000 StandoutNobel
Anisotropy of the In-Plane Strain in GaN Grown on A-Plane Sapphire
2002
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
1999
Structural and vibrational properties of GaN
1999 StandoutNobel
High-power InGaN-based blue laser diodes with a long lifetime
1998 StandoutNobel
Defect Tolerance to Intolerance in the Vacancy-Ordered Double Perovskite Semiconductors Cs2SnI6 and Cs2TeI6
2016
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
2003 StandoutNobel
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire
2005 StandoutNobel
High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
1999
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Worldwide Variation in Human Drug-Metabolism Enzyme GenesCYP2B6andUGT2B7: Implications for HIV/AIDS Treatment
2012
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams
2001 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Brillouin scattering study of bulk GaN
1999 StandoutNobel
Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells
2010 StandoutNobel
Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
2002 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction
2000
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
2011 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
III–nitrides: Growth, characterization, and properties
2000
Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy
2002 StandoutNobel
First-principles study on electronic and elastic properties of BN, AlN, and GaN
1998
Depressogenic effects of medications: a review
2011
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN
2006 StandoutNobel
Interleukin-10 and the Interleukin-10 Receptor
2001 Standout
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
2004 Standout
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
1999 StandoutNobel
InGaN-based violet laser diodes
1999 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
An attenuated-total-reflection study on the surface phonon-polariton in GaN
2000 StandoutNobel
Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire
1999
Photoreflectance spectra of excitonic polaritons in GaN substrate prepared by lateral epitaxial overgrowth
2000 StandoutNobel
InGaN-based blue light-emitting diodes and laser diodes
1999 StandoutNobel
Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯) and (101¯1¯) planes
2008 StandoutNobel
Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
2000
Electronic band structure of wurtzite GaN under biaxial strain in theMplane investigated with photoreflectance spectroscopy
2002
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Searching for “Defect-Tolerant” Photovoltaic Materials: Combined Theoretical and Experimental Screening
2017 StandoutNobel
Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates
2007
Works of A. Kimura being referenced
Successful Efavirenz Dose Reduction in HIV Type 1-Infected Individuals with Cytochrome P450 2B6 *6 and *26
2007
Assessment of microchimerism in rat liver transplantation by polymerase chain reaction
1996
Continuous-Wave Operation of InGaN Multi-Quantum-Well Laser Diodes Grown on an n-GaN Substrate with a Backside n-Contact
1999
Uniaxial Stress Effects On Valence Band Structures Of GaN
1997
Valence band hybridization inN GaN 1 − x As x
2004
Reflectance spectroscopy on GaN films under uniaxial stress
1997
High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy
1998