Citation Impact
Citing Papers
AMP-activated protein kinase (AMPK) action in skeletal muscle via direct phosphorylation of PGC-1α
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Elementary description of the optical properties of GaAsN alloys with small nitrogen content
2000
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
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Electron and chemical reservoir corrections for point-defect formation energies
2016
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Ab‐initiosimulations of materials using VASP: Density‐functional theory and beyond
2008 Standout
Dependence of Resonance Energy Transfer on Exciton Dimensionality
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Generalized Neural-Network Representation of High-Dimensional Potential-Energy Surfaces
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Entropy-Driven Stabilization of a Novel Configuration for Acceptor-Hydrogen Complexes in GaN
2001
Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition
2001
Interaction of hydrogen with nitrogen interstitials in wurtzite GaN
2001
Many-body effects on optical gain in strained hexagonal and cubic GaN/AlGaN quantum well lasers
1997
Insights into the electronic properties of InGaAsN: the effect of nitrogen from band structure to devices
2002
Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures
1997
Ab initiolattice dynamics of BN and AlN: Covalent versus ionic forces
1997
Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition
1998
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Theoretical description of H behavior in GaN p-n junctions
2001
Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin–orbit coupling
1996
Biexciton Luminescence from GaN Epitaxial Layers
1996 StandoutNobel
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
2004
High-pressure phases of group-IV, III–V, and II–VI compounds
2003
Luminescence properties of defects in GaN
2005 Standout
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Interaction of hydrogen with gallium vacancies in wurtzite GaN
2001
Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO
2003
Refractive index and gap energy of cubic InxGa1−xN
2000
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Segregation effects at vacancies inAl x Ga 1 − x N Si x Ge 1 − x
1999
Direct calculation ofk ⋅ p
2000
Effects of atomic short-range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys
1998
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
First-principles calculations of gap bowing inIn x Ga 1 − x N In x Al 1 − x N
2002
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Phase Separation, Gap Bowing, and Structural Properties of Cubic InxAl1—xN
2002
Magneto-optical and light-emission properties of III As N semiconductors
2002
From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
2000
Properties of cubic (In,Ga)N grown by molecular beam epitaxy
1999
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN
1998
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
Optical investigations of AlGaN on GaN epitaxial films
1999 StandoutNobel
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
Electron-beam dissociation of the MgH complex in p-type GaN
2002
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Ab initiophonon dispersions of wurtzite AlN, GaN, and InN
2000
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Defect formation near GaN surfaces and interfaces
1999
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
2000 StandoutNobel
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes
1998
Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
1997
InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
1999 StandoutNobel
Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates
2003
Phase diagram, chemical bonds, and gap bowing of cubic InxAl1−xN alloys: Ab initio calculations
2002
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen
2001
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation
1999
Optical gain of strained wurtzite GaN quantum-well lasers
1996
Effect of nitrogen on the temperature dependence of the energy gap inIn x Ga 1 − x As 1 − y N y / GaAs
2001
The Energy Band Gap of AlxGa1-xN
2002
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
2003
Threshold conditions for an ultraviolet wavelength GaN quantum-well laser
1998
Optical properties of cubic GaN and (In,Ga)N
1998
Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
2015
Structural TEM study of nonpolara ( 11 2 ¯ 0 ) 4 H
2005 Nobel
Determination of the Al mole fraction and the band gap bowing of epitaxial AlxGa1−xN films
1997
Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1−xAlxN
1996
Identification of hydrogen configurations inp-type GaN through first-principles calculations of vibrational frequencies
2003
Dynamics and polarization of group-III nitride lattices: A first-principles study
2000
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Structural, electronic, and effective-mass properties of silicon and zinc-blende group-III nitride semiconductor compounds
2001
Evolution of theGaN x P 1 − x
2002
Epitaxial Lateral Overgrowth of GaN
2001
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
2005
Theory of electronic structure evolution in GaAsN and GaPN alloys
2001
Dependence of the fundamental band gap of AlxGa1−xN on alloy composition and pressure
1999
Experimental studies of the conduction-band structure of GaInNAs alloys
2002
Metastability of Oxygen Donors in AlGaN
1998
The role of threading dislocations in the physical properties of GaN and its alloys
1999
Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
1997
Mg-hydrogen interaction in AlGaN alloys
2012
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
First-principles study on electronic and elastic properties of BN, AlN, and GaN
1998
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
InGaN/GaN/AIGaN-Based Laser Diodes With an Estimated Lifetime of Longer Than 10,000 Hours
1998 StandoutNobel
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
1998
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
GaAs:N vs GaAs:B alloys: Symmetry-induced effects
2001
Quantum mechanical effects in (Ga,In)(As,N) alloys
2000
Pseudopotential theory of dilute III V nitrides
2002
AMPK activation increases uncoupling protein-3 expression and mitochondrial enzyme activities in rat muscle without fibre type transitions
2003
Discrete and continuous spectrum of nitrogen-induced bound states in heavily dopedGaAs 1 − x N x
2001
Electronic structure ofIn y Ga 1 − y As 1 − x N x / GaAs k ⋅ p
2002
Theoretical study of the relative stability of structural phases in group-III nitrides at high pressures
2000
Band anticrossing in dilute InNxSb1−x
2002
Formation of an impurity band and its quantum confinement in heavily doped GaAs:N
2000
Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition
1998
Hydrogen configurations, formation energies, and migration barriers in GaN
2003
Carbon impurities and the yellow luminescence in GaN
2010
Luminescence from defects in GaN
2006
Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells
1999
GaN: Processing, defects, and devices
1999
Degradation effects of the active region in UV-C light-emitting diodes
2018
Gap bowing and Stokes shift in InxGa1−xN alloys: First-principles studies
2002
Band anticrossing in highly mismatched III V semiconductor alloys
2002
Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
2000
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by NH3-source molecular beam epitaxy
2007 StandoutNobel
Electronic structure calculations on nitride semiconductors
1999
Al x Ga 1−x N/GaN band offsets determined by deep-level emission
2001
Band gaps of lattice-matched (Ga,In)(As,N) alloys
1999
InGaN-based blue laser diodes
1997 StandoutNobel
Elastic constants and related properties of tetrahedrally bonded BN, AlN, GaN, and InN
1996
Theory of intrinsic and H-passivated screw dislocations in GaN
2002
Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)
2002
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Localization and anticrossing of electron levels inGaAs 1 − x N x
1999
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
2003
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Energy band bowing parameter in AlxGa1−xN alloys
2002
Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence
2001
Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN
1999 StandoutNobel
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Microscopic theory of gain for an InGaN/AlGaN quantum well laser
1997
Exciton localization in InGaN quantum well devices
1998 StandoutNobel
Band-gap and k.p. parameters for GaAlN and GaInN alloys
1999
Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
1998 StandoutNobel
Determination of Band-Gap Bowing for AlxGa1-xN Alloys
2001
Optical properties and ordering of AlxGa1−xN MBE-layers
2001
Evolution ofGaAs 1 − x N x A u / G a A s 1 − x N x
2000
Derivation of a 10-band model for dilute nitride semiconductors
2003
Temperature behavior of the GaNP band gap energy
2003
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Isotope effects on the rate of electron-beam dissociation of Mg–H complexes in GaN
2002
Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
2004
When group-III nitrides go infrared: New properties and perspectives
2009
Band anticrossing inGaP 1 − x N x
2002
The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys
2001
Calculation of shallow donor levels in GaN
2000
Large band gap bowing of InxGa1−xN alloys
1998
Influence of composition fluctuations and strain on gap bowing inIn x Ga 1 − x N
2001
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN
2000
Band parameters for nitrogen-containing semiconductors
2003 Standout
Defect-Related Donors, Acceptors, and Traps in GaN
2001
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Optical properties of doped InGaN/GaN multiquantum-well structures
1999 StandoutNobel
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
2001
Dielectric function spectra of GaN, AlGaN, and GaN/AlGaN heterostructures
2001
Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band
2000
Band-gap evolution, hybridization, and thermal stability ofIn x Ga 1 − x N
2002
Observation of nitrogen vacancy in proton-irradiated AlxGa1−xN
2001
Quantum-well width dependence of threshold current density in InGaN lasers
1999 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of A. F. Wright being referenced
Theoretical properties of the N vacancy in p-type GaN(Mg,H) at elevated temperatures
2006
Bowing parameters for zinc-blende Al1−xGaxN and Ga1−xInxN
1995
Theoretical investigation of edge dislocations in AlN
1998
Substitutional and interstitial carbon in wurtzite GaN
2002
Charge accumulation at a threading edge dislocation in gallium nitride
1999
Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment
2001
Effects of biaxial strain and chemical ordering on the band gap of InGaN
2001
Substitutional and interstitial oxygen in wurtzite GaN
2005
Theoretical study of room temperature optical gain in GaN strained quantum wells
1996
Band structure ofIn x Ga 1 − x As 1 − y N y
1999
Influence of crystal structure on the lattice sites and formation energies of hydrogen in wurtzite and zinc-blende GaN
1999
Role of carbon in GaN
2002
First-principles calculations for zinc-blende AlInN alloys
1995
Basal-plane stacking faults and polymorphism in AlN, GaN, and InN
1997
Equilibrium state of hydrogen in gallium nitride: Theory and experiment
2000
The band-gap bowing of AlxGa1−xN alloys
1999
Consistent structural properties for AlN, GaN, and InN
1995