Standout Papers

Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on se... 2011 2026 2016 2021 44
  1. Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates (2011)
    Feng Wu, Anurag Tyagi et al. Journal of Applied Physics
  2. Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy (2011)
    Po Shan Hsu, Erin C. Young et al. Applied Physics Letters
  3. Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates (2011)
    Po Shan Hsu, Junichi Sonoda et al. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
  4. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission (2012)
    Erin C. Young, Feng Wu et al. Applied Physics Letters
  5. Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission (2014)
    Feng Wu, Yuji Zhao et al. Applied Physics Letters
  6. Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures (2011)
    Feng Wu, Erin C. Young et al. Applied Physics Letters
  7. Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers (2012)
    Ingrid Koslow, Matthew T. Hardy et al. Applied Physics Letters
  8. Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures (2013)
    Ingrid Koslow, Matthew T. Hardy et al. Journal of Crystal Growth
  9. Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy (2012)
    Po Shan Hsu, Matthew T. Hardy et al. Applied Physics Letters
  10. Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy (2010)
    Erin C. Young, Feng Wu et al. Applied Physics Express
  11. 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer (2012)
    Po Shan Hsu, Matthew T. Hardy et al. Applied Physics Letters
  12. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy (2011)
    А. Е. Романов, Erin C. Young et al. Journal of Applied Physics
  13. Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes (2013)
    Po Shan Hsu, Feng Wu et al. Applied Physics Letters
  14. Strain-induced polarization in wurtzite III-nitride semipolar layers (2006)
    А. Е. Романов, Troy J. Baker et al. Journal of Applied Physics
  15. Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures (2012)
    Matthew T. Hardy, Po Shan Hsu et al. Applied Physics Letters

Citation Impact

Citing Papers

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
2018
Optical polarization characteristics of semipolar (303¯1) and (303¯1¯) InGaN/GaN light-emitting diodes
2012 StandoutNobel
Two-Dimensional Nanoscale Self-Assembly on a Gold Surface by Spinodal Decomposition
2003 StandoutNobel
Fully hardware-implemented memristor convolutional neural network
2020 StandoutNature
High tensile ductility in a nanostructured metal
2002 StandoutNature
Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate
2007 StandoutNobel
Highly efficient yellow photoluminescence from {11–22} InGaN multiquantum-well grown on nanoscale pyramid structure
2010
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Anisotropic lattice relaxation in non-c-plane InGaN/GaN multiple quantum wells
2012
Strengthening Materials by Engineering Coherent Internal Boundaries at the Nanoscale
2009 StandoutScience
Growth and strain characterization of high quality GaN crystal by HVPE
2011
Structure of a Thiol Monolayer-Protected Gold Nanoparticle at 1.1 A Resolution
2007 StandoutScienceNobel
High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$
2011 StandoutNobel
Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes
2010 StandoutNobel
Optimization of Device Structures for Bright Blue Semipolar (1011) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition
2010 StandoutNobel
Instability-Driven SiGe Island Growth
2000
Role of strain in polarization switching in semipolar InGaN/GaN quantum wells
2010
30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
2010 StandoutNobel
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
Green Semipolar (2021) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth
2013 StandoutNobel
Thermal stability of submicrocrystalline copper and Cu: ZrO2 composite
1996
Extreme grain refinement by severe plastic deformation: A wealth of challenging science
2013 Standout
Magnetic Iron Oxide Nanoparticles: Synthesis, Stabilization, Vectorization, Physicochemical Characterizations, and Biological Applications
2008 Standout
High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
2008 StandoutNobel
Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes
2014 StandoutNobel
On the nature of high internal stresses in ultrafine grained materials
1994
High strain rate superplasticity in an Al-Mg alloy containing scandium
1998
Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates
2007 StandoutNobel
Ensembles of gliding grain boundary dislocations in ultrafine grained materials produced by severe plastic deformation
1997
On the optical polarization properties of semipolar InGaN quantum wells
2011
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
2010 StandoutNobel
Size effects in micromechanics of nanocrystals
1993
Evaluation of GaN substrates grown in supercritical basic ammonia
2009 StandoutNobel
Confinement effects on valence-subband character and polarization anisotropy in (112¯2) semipolar InGaN/GaN quantum wells
2012
Experimental studies of small particle structures
1994
Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
2013 StandoutNobel
Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning
2009 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Nanocrystalline state and solid state amorphization
1995
Nonpolar and Semipolar Group III Nitride-Based Materials
2009
Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching
2010
Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures
2012 StandoutNobel
Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
2009 StandoutNobel
Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN
2006 StandoutNobel
Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays
2014 StandoutNobel
Approach to nanostructured solids through the studies of submicron grained polycrystals
1995
Polarization fields in wurtzite strained layers grown on () planes
2008
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations
2009 StandoutNobel
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
GaN and InGaN(1122) surfaces: Group-III adlayers and indium incorporation
2009
Bulk nanostructured materials from severe plastic deformation
2000 Standout
Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
2008 StandoutNobel
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
2011
Gallium Indium Nitride-Based Green Lasers
2011
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
2011
Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well
2009 StandoutNobel
Structure shape and stability of nanometric sized particles
2001
History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2013 StandoutNobel
A second-generation reactive empirical bond order (REBO) potential energy expression for hydrocarbons
2002 Standout
True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy
2013 StandoutNobel
Imperfect Oriented Attachment: Dislocation Generation in Defect-Free Nanocrystals
1998 StandoutScience
Electroluminescence Characterization of (2021) InGaN/GaN Light Emitting Diodes with Various Wavelengths
2010 StandoutNobel
High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
2007 StandoutNobel
Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy
2012 StandoutNobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates
2013 StandoutNobel
Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy
2009
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Dichromatic color tuning with InGaN-based light-emitting diodes
2008 StandoutNobel
Microstructures and hardness of ultrafine-grained Ni3Al
1993
Structural characterization of nanocrystalline copper by means of x-ray diffraction
1996
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2011 StandoutNobel
Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes
2011 StandoutNobel
Deformation behaviour of ultra-fine-grained copper
1994
Nonpolar and Semipolar Orientations: Material Growth and Properties
2008 Nobel
High dislocation density–induced large ductility in deformed and partitioned steels
2017 StandoutScience
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Structure determination of small particles by HREM imaging: theory and experiment
1998
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Hall–Petch relationship in pulsed-laser deposited nickel films
2004
Fabrication of InGaN/GaN Multiple Quantum Wells on (1101) GaN
2013 StandoutNobel
Paradox of Strength and Ductility in Metals Processed Bysevere Plastic Deformation
2002
High Power and High Efficiency Blue InGaN Light Emitting Diodes on Free-Standing Semipolar (3031) Bulk GaN Substrate
2010 StandoutNobel
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
2013 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate
2007 StandoutNobel
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel

Works of А. Е. Романов being referenced

Size effects of dislocation stability in nanocrystals
1991
Screw dislocation in spherical particle
1991
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Random disclination ensembles in ultrafine-grained materials produced by severe plastic deformation
1996
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Modeling of Threading Dislocation Density Reduction in Heteroepitaxial Layers I. Geometry and Crystallography
1996
Channels of Relaxation of Elastic Stresses in Pentagonal Nanoparticles
1991
Voids and channels in pentagonal crystals
1993
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Application of disclination concept to solid structures
2009
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Modeling of threading dislocation reduction in growing GaN layers
2001
Multiscale modeling approach for calculating grain-boundary energies from first principles
1998
Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates
2011 StandoutNobel
Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
2011 StandoutNobel
Critical Thickness for Onset of Plastic Relaxation in (11\bar22) and (20\bar21) Semipolar AlGaN Heterostructures
2010
Softening of the elastic modulus in submicrocrystalline copper
1995
Lateral ordering of quantum dots by periodic subsurface stressors
1999
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
On the yield stress of nanocrystals
1993
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
On the structure, stress fields and energy of nonequilibrium grain boundaries
1993
Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures
2013 StandoutNobel
Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
2012 StandoutNobel
Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
2011
Lattice Tilt and Misfit Dislocations in (11\bar22) Semipolar GaN Heteroepitaxy
2010 StandoutNobel
Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers
1996
Rankless by CCL
2026