Standout Papers

A new method for determining the FET small-signal equivalent circuit 1988 2026 2000 2013 830
  1. A new method for determining the FET small-signal equivalent circuit (1988)
    G. Dambrine, A. Cappy et al. IEEE Transactions on Microwave Theory and Techniques

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Works of A. Cappy being referenced

Dwell-Time-Limited Coherence in Open Quantum Dots
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Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dot
2002
Terahertz emission by plasma waves in 60 nm gate high electron mobility transistors
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Noise modeling and measurement techniques (HEMTs)
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Nonlinear Effects in T-Branch Junctions
2004
Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
1995
Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics
1980
Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's
1980
Frequency dependence of source access resistance of heterojunction field-effect transistor
1985
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1996
Terahertz detection by GaN/AlGaN transistors
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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors
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Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors
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Electron transport properties of strained InxGa1−xAs
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Oblique modes effect on terahertz plasma wave resonant detection in InGaAs∕InAlAs multichannel transistors
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Influence of the gate leakage current on the noise performance of MESFETs and MODFETs
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Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realization
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Theoretical contribution to the design of millimeter-wave TEO's
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Nonlinear electrical properties of three-terminal junctions
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Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor
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A new method for determining the FET small-signal equivalent circuit
1988 Standout
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2026