Citation Impact
Citing Papers
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Internal efficiency analysis of 280-nm light emitting diodes
2004 StandoutNobel
High-contrast gratings for integrated optoelectronics
2012
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
Electrical Design Optimization of Single-Mode Tunnel-Junction-Based Long-Wavelength VCSELs
2006
Chip Shaping for Light Extraction Enhancement of Bulk $c$-Plane Light-Emitting Diodes
2012 StandoutNobel
GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
2013 StandoutNobel
Metalenses at visible wavelengths: Diffraction-limited focusing and subwavelength resolution imaging
2016 StandoutScience
Dielectric gradient metasurface optical elements
2014 StandoutScience
Recent results and latest views on microcavity LEDs
2004 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
2008 StandoutNobel
Photonic crystals in the optical regime â past, present and future
1999
Improvement in light extraction efficiency in group III nitride-based light-emitting diodes using moth-eye structure
2006 StandoutNobel
Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy
2007 StandoutNobel
Fabrication of photonic crystals for the visible spectrum by holographic lithography
2000 StandoutNature
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction
2005 StandoutNobel
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Energy Efficient and Energy Proportional Optical Interconnects for Multi-Core Processors: Driving the Need for On-Chip Sources
2014
Optical Design of InAlGaAs Low-Loss Tunnel-Junction Apertures for Long-Wavelength Vertical-Cavity Lasers
2006
Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding
2006 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
High-contrast gratings as a new platform for integrated optoelectronics
2010
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Lasing in direct-bandgap GeSn alloy grown on Si
2015 Standout
Optically resonant dielectric nanostructures
2016 StandoutScience
Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes
2010 StandoutNobel
High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
1999
Works of A. Caliman being referenced
10 Gbps VCSELs with High Single Mode Output in 1310 nm and 1550 nm Bands
2008
1550 nm-band VCSEL 0.76 mW singlemode output power in 20–80°C temperature range
2004
1.5-mW Single-Mode Operation of Wafer-Fused 1550-nm VCSELs
2004
66% CW wallplug efficiency from Al-free 0.98 µm-emittingdiode lasers
1996
GaNAsSb: how does it compare with other dilute III V-nitride alloys?
2002
High-performance single-mode VCSELs in the 1310-nm waveband
2005
Broadband MEMS-Tunable High-Index-Contrast Subwavelength Grating Long-Wavelength VCSEL
2010