Citation Impact
Citing Papers
Deep acceptors trapped at threading-edge dislocations in GaN
1998
Exciton and donor - acceptor recombination in undoped GaN on Si(111)
1997
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Electric control of the spin Hall effect by intervalley transitions
2014
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Spin Pumping and Inverse Spin Hall Effect in Platinum: The Essential Role of Spin-Memory Loss at Metallic Interfaces
2014
Strain energy and lateral friction force distributions of carbon nanotubes manipulated into shapes by atomic force microscopy
2009
The emergence of spin electronics in data storage
2007 StandoutNobel
A broadband achromatic metalens in the visible
2018 Standout
Growth and applications of Group III-nitrides
1998
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Free-Standing Kinked Silicon Nanowires for Probing Inter- and Intracellular Force Dynamics
2015 StandoutNobel
Acceptors in undoped GaN studied by transient photoluminescence
2002
High-Resolution EM of Colloidal Nanocrystal Growth Using Graphene Liquid Cells
2012 StandoutScience
Luminescence properties of defects in GaN
2005 Standout
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
2010 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Temperature dependence of the thermal expansion of GaN
2005
MOS-Based Spin Devices for Reconfigurable Logic
2007
Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
2008 StandoutNobel
Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN
2001
Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire
2002
Plastic strain relaxation of nitride heterostructures
2004
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Cracking of GaN films
2001
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
2010 StandoutNobel
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Buried stressors in nitride semiconductors: Influence on electronic properties
2005
Transient photoluminescence of defect transitions in freestanding GaN
2001
Graphene-Like Two-Dimensional Materials
2013 Standout
Tetrathiafulvalenes, Oligoacenenes, and Their Buckminsterfullerene Derivatives: The Brick and Mortar of Organic Electronics
2004 Standout
Thermoelectric Generation Based on Spin Seebeck Effects
2016
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
2005 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
2005 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
2003
Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction
2001
Near Defect Free GaN Substrates
1999
Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate
2011 StandoutNobel
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Influence of defect states on the nonlinear optical properties of GaN
1999
Spin Hall effects
2015 Standout
Heterogeneous Catalysis of a Copper-Coated Atomic Force Microscopy Tip for Direct-Write Click Chemistry
2009 StandoutNobel
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques
1997 Standout
Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells
2004
Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
2003
Recent Advances in Fullerene Superconductivity
2002
High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy
2003
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Stress engineering during metalorganic chemical vapor deposition of AlGaN/GaN distributed Bragg reflectors
2001
Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films
1999
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy
2000
Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition
2007 StandoutNobel
Prospects for LED lighting
2009 StandoutNobel
Advances in MOVPE, MBE, and CBE
1992
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
2006 StandoutNobel
Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
2000
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN
2002
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Spatially Resolved Suzuki Coupling Reaction Initiated and Controlled Using a Catalytic AFM Probe
2005
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires
2009 Science
A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser
2000
Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires
2010
Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells
2004
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Substrates for gallium nitride epitaxy
2002
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout
Works of A. Barski being referenced
High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns
2006
Strain relaxation in AlN epitaxial layers grown on GaN single crystals
1999
Spin pumping and inverse spin Hall effect in germanium
2013
Compact electron cyclotron resonance plasma source for molecular beam epitaxy applications
1996
How to induce the epitaxial growth of gallium nitride on Si(001)
1995
Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations
2006
Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
1996
High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy
1999
Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures: growth kinetics, electrical and optical properties
1991
Giant electric fields in unstrained GaN single quantum wells
1999
Polarity Related Problems in Growth of GaN Homoepitaxial Layers
1998
Influence of the surface morphology on the yellow and “edge” emissions in wurtzite GaN
1998
Nanomanipulation by atomic force microscopy of carbon nanotubes on a nanostructured surface
2003
On the Origin of the Yellow Donor-Acceptor Pair Emission in GaN
1997
Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si
1996
Analysis of the red optical emission in cubic GaN grown by molecular-beam epitaxy
1999
Growth of aluminum nitride on (111) silicon: Microstructure and interface structure
1998
Spontaneous polarization effects inGaN / Al x Ga 1 − x N
2000