Citation Impact
Citing Papers
Sustainable and Bio-Based Food Packaging: A Review on Past and Current Design Innovations
2023 Standout
Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers
2008
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
2015 StandoutNature
Graphene‐Based Materials: Synthesis, Characterization, Properties, and Applications
2011 Standout
Lead halide perovskite nanowire lasers with low lasing thresholds and high quality factors
2015 Standout
Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors
2010 Nature
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Advances in group III-nitride-based deep UV light-emitting diode technology
2010 Standout
A review of Ga2O3 materials, processing, and devices
2018 Standout
Graphene Cathode-Based ZnO Nanowire Hybrid Solar Cells
2012 StandoutNobel
Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si
2002
Growth of ZnO Layers by Metal Organic Chemical Vapor Phase Epitaxy
2002
Growth study and impurity characterization of Al In1−N grown by metal organic chemical vapor deposition
2011 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
MOVPE growth of GaN on Si(111) substrates
2002
GaN-on-Si Power Technology: Devices and Applications
2017 Standout
Anisotropic FMR‐linewidth of triple‐domain Fe layers on hexagonal GaN(0001)
2006 StandoutNobel
Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
2002
Wide bandgap GaN-based semiconductors for spintronics
2004
Recent Developments in Polydiacetylene-Based Sensors
2019
C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
2006
Anomalous Eu layer doping in Eu, Si co-doped aluminium nitride based phosphor and its direct observation
2010
Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy
2007 StandoutNobel
Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
2010 Science
Growth of GaN on Si(111) Substrates via a Reactive-Sputter-Deposited AlN Intermediate Layer
2013 StandoutNobel
Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
2005
GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
2013 StandoutNobel
Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Visible and near-infrared photoluminescences of europium-doped titania film
2006
Lanthanide-Based Luminescent Hybrid Materials
2009 Standout
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
2012 StandoutNobel
Determination of carrier diffusion length in p- and n-type GaN
2014
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
GaN MOS device using SiO2-Ga2O3 insulator grown by photoelectrochemical oxidation method
2003
Origin of electrons emitted into vacuum from InGaN light emitting diodes
2014 StandoutNobel
High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD
2003
Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
2007
Crack-Free AlN/GaN Distributed Bragg Reflectors on AlN Templates
2012 StandoutNobel
Optical micro‐characterization of group‐III‐nitrides: correlation of structural, electronic and optical properties
2003
Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
2013 StandoutNobel
Atomic arrangement at the AlN/Si (111) interface
2003
Metalorganic chemical vapor phase deposition of ZnO with different O-precursors
2002
Atomic Arrangement at the AlN/Si(110) Interface
2008
Works of A. Alam being referenced
Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)
2002
Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures
2002
Bright blue electroluminescence from an InGaN/GaN multiquantum-well diode on Si(111): Impact of an AlGaN/GaN multilayer
2001
Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates
2004
Nearly strain-free AlGaN on (0001) sapphire: X-ray measurements and a new crystallographic growth model
2000
Crack-Free InGaN/GaN Light Emitters on Si(111)
2001
Green electroluminescence from a Tb-doped AlN thin-film device on Si
2002
Polydiacetylene Nanofiber Composites as a Colorimetric Sensor Responding To Escherichia coli and pH
2017
AlGaN/GaN HEMTs on (111) silicon substrates
2002
Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2000
Luminescence and lasing in InGaN∕GaN multiple quantum well heterostructures grown at different temperatures
2004
Uniform III‐nitride growth in single wafer horizontal MOVPE reactors
2005